NTE858M NTE858SM Integrated Circuit Dual, LowNoise JFETInput Operational Amplifier Description: The NTE858M and NTE858SM are dual, lownoise JFET input operational amplifiers combining two stateoftheart linear technologies on a single monolithic integrated circuit. Each internally com- pensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias cur- rents, input offset currents, and supply currents. Moreover, these devices exhibit lownoise and low harmonic distortion making them ideal for use in highfidelity audio amplifier applications. Features: Available in Two Different Package Types: 8Lead Mini DIP (NTE858M) SOIC8 Surface Mount (NTE858SM) Low Input Noise Voltage: 18nVHz Typ Low Harmonic Distortion: 0.01% Typ Low Input Bias and Offset Currents 12 High Input Impedance: 10 Typ High Slew Rate: 13V/ s Typ Wide Gain Bandwidth: 4MHz Typ Low Supply Current: 1.4mA per Amp Absolute Maximum Ratings: Supply Voltage V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V CC V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V EE Differential Input Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V ID Input Voltage Range (Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V IDR Output ShortCircuit Duration (Note 2), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous S Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW D Derate Above T = +47C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/C A Operating Ambient Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C A Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or 15V, whichever is less. Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages must be limited to ensure that power dissipation ratungs are not exceeded.Electrical Characteristics: (V = +15V, V = 15V, T = +25C unless otherwise specified) CC EE A Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V R 10k, 3 10 mV IO S V = 0 CM T = 0 to +70C 13 mV A Average Temperature V / T T = 0 to +70C 10 V/C IO A Coefficient of Input Offset Voltage 5 50 pA Input Offset Current I V = 0, IO CM Note 3 T = 0 to +70C 2 nA A Input Bias Current I V = 0, 30 200 pA IB CM Note 3 T = 0 to +70C 7 nA A 12 Input Resistance r 10 i Common Mode Input Voltage V 10 +15, 12 V ICR Range LargeSignal Voltage Gain A V = 10V, 25 150 V/mV VOL O R 2k L T = 0 to +70C 15 V/mV A Output Voltage Swing V R = 10k 24 28 V L O (PeaktoPeak) R 10k 24 V T = 0 to +70C L A R 2k 20 V L Common Mode Rejection Ratio CMRR R 10k 70 100 dB S Supply Voltage Rejection Ratio PSRR R 10k 70 100 dB S Supply Current (Each Amplifier) I 1.4 2.5 mA D Unity Gain Bandwidth BW 4 MHz Slew Rate SR V = 10V, R = 2k, C = 100pF 13 V/ s IN L L Rise Time t 0.1 s r Overshoot Factor V = 20mV, R = 2k, 10 % IN L C = 100pF L Equivalent Input Noise Voltage e R = 100 , f = 1000Hz 18 nV/Hz n S Equivalent Input Noise Current i R = 100 , f = 1000Hz 0.01 pA/Hz n S Total Harmonic Distortion THD V = 10V, R 1k, 0.01 % O(RMS) S R 2k, f = 1000Hz L Channel Separation A = 100 120 dB V Note 3. Input Bias currents of JFET input operational amplifiers approximately double for every 10C rise in Junction Temperature. To maintain Junction Temperature as close to Ambient Tem- perature as possible, pulse techniques must be used during test.