NTE918M NTE

NTE918 NTE918M NTE918SM Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier de- signed for applications requiring wide bandwidth and high slew rate. These devices have internal uni- ty gain frequency compensation. This considerably simplifies its application since no external compo- nents are necessary for operation. However, unlike most internally compensated amplifiers, external frequency compensation may be added for optimum performance. For inverting applications, feed- forward compensation will boost the slew rate to over 150V/ s and almost double the bandwidth. Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is not needed. Further, a single capacitor can be added to reduce the 0.1% setting time to under 1 s. The high speed and fast setting time of these OP amps make them useful in A/D converters, oscilla- tors, active filters, sample and hold circuits, or general purpose amplifiers. These devices are easy to apply and offer an order of magnitude better AC performance than industry standards such as the NTE909 and NTE909D. Features: 15MHz Small Signal Bandwidth Guaranteed 50V/ s Slew Rate Maximum Bias Current of 250nA Operates from Supplies of 5V to 20V Internal Frequency Compensation Input and Output Overload Protected Pin Compatible with General Purpose OP Amps Available in 3 Different Case Styles: 8Lead Metal Can: NTE918 8Lead Mini DIP: NTE918M 8Lead SOIC (Surface Mount): NTE918SMAbsolute Maximum Ratings: Power Supply Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V S Power Dissipation (Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW D Differential Input Current (Note 3), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA ID Input Voltage (Note 4), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V I Output ShortCircuit Duration, t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite S Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering, 10sec), T L NTE918 (Metal Can) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C NTE918M (Plastic DIP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C NTE918SM (Surface Mount) Vapor Phase (60sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220C Note 1. NTE918 is a discontinued device and no longer available. Note 2. The maximum junction temperature of these devices is +110C. For operating at elevated temperatures, the NTE918 must be derated based on a thermal resistance of +150C/W, junctio to ambient, or +45C/W, junction to case. The thermal resistance of the NTE918M and the NTE918SM is +100C/W, junction to ambient. Note 3. The inputs are shunted with backtoback diodes for overvoltage protection. Therefore, ex- cessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. Note 4. For supply voltages less than 15V, the absolute maximum input voltage is equal to the supply voltage. Electrical Characteristics: (5V V 20V, 0 T +70C, Note 5 unless otherwise specified) S A Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V 15 V IO T = +25C 4 10 V A Input Offset Current I 300 nA IO T = +25C 30 200 nA A Input Bias Current I 750 nA IB T = +25C 150 500 nA A Input Resistance r T = +25C 0.5 3.0 M i A Supply Current I , I T = +25C 5 10 mA CC EE A Large Signal Voltage Gain A V = 15V, V = 10V, R 2k 20 V/mV V S OUT L V = 15V, V = 10V, R 2k , T = +25C 25 200 V/mV S OUT L A Slew Rate SR V = 15V, A = 1, T = +25C, Note 6 50 70 V/ s S V A Small Signal Bandwidth BW V = 15V, T = +25C 15 MHz S A Output Voltage Swing V V = 15V, R = 2k 12 13 V O S L Input Voltage Range V V = 15V 11.5 V I S CommonMode Rejection Ratio CMRR 100 dB Supply Voltage Rejection Ratio PSRR 65 80 dB Note 5. Power supplies must be bypassed with 0.1 F disc capacitors. Note 6. Slew rate is tested with V = 15V. These devices are in a unitygain noninverting configuration. S V is stepped from 7.5V to +7.5V and vice versa. The slew rates between 5V and +5V and IN vice versa are tested and guaranteed to exceed 50V/ s.