NTE943M NTE

NTE943, NTE943M, & NTE943SM Integrated Circuit Low Power, Low Offset, Dual Voltage Comparator Description: The NTE943, NTE943M, and NTE943SM consist of two independent precision voltage comparators with an offset voltage speciication as low as 2.0mV max for two comparators which were designed specifically to operate from a single power supply over a wid range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magni- tude of the power supply voltage. These comparators alos have a unique characteristic in that the input commonmode voltage range includesground, even though operated from a single powe sup- ply voltage. Application areas include limit comparators, simple analog to digital converters pulse, squarewave and time delay generators wide range VCO MOS clock timers multivibrators and high voltage digital logic gates. These devices are designed to directly interface with TTL and CMOS. When operated from both plus and minus power supplies they will directly interface with MOS logic where their low power drain is a distinct advantage over standard comparators. Features: Wide Single Supply Volatge Range: 2.0V to 36V Dual Supplies: 1.0V to 18V Low Supply Current Drain (0.8mA) Independent of Supply Voltage (1.0mW/Comparator at 5V) Low Input Biasing Current: 25nA Low Input Offset Current: 5nA Maximum Offset Voltage: 3mV Input CommonMode Voltage Range Includes Ground Differential Input Voltage Range Equal to the Power Supply Voltage Low Output Saturation Voltage: 240mV 4mA Output Voltge Compatible with TTL, DTL, ECL, MOS, and CMOS Logic Sytems Available in 3 Different Case Styles: 8Lead Metal Can: NTE943 8Lead Mini DIP: NTE943M 8Lead SOIC (Surface Mount): NTE943SMAbsolute Maximum Ratings: Supply Voltage, V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V or 18V Differential Input Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3V to +36V Power Dissipation (Note 2) NTE943 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660mW NTE943M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 780mW NTE943SM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mW Output Short Circuit to GND (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Input Current (V < 0.3V), Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA IN Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C Lead Temperature (During Soldering, 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Note 1. Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the commonmode range, the comparator will provide a proper out- put state. The low input voltage state must not be less than 0.3V (or 0.3V below the the magnitude of the negative power supply, if used). Note 2. For operating at elevated temperature, these devices must be derated based on a 125C maximum junction temperature and a thermal resistance of 127C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The low bias dis- sipation and the ONOFF haracteristic of the output keeps the chip dissipation very small (P 100mW), provided the output transistors are allowed to saturate. D Note 3. Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to GND, the maximum output current is approximately 20mA independent of the magnitude of V+. Note 4. This input current will only exist when the voltage at any of th input leads is driven negative. It is due to the collectorbase junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to GND for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal out- put states will reestablish when the input voltage, which was negative, again returns to a value greater than 0.3V. Electrical Characteristics: (0 T +70C, V+ = 5V unless otherwise specified) A Parameter Test Conditions Min Typ Max Unit Input Offset Voltage Note 5 9.0 mV T = +25C, Note 5 1.0 5.0 mV A Input Offset Current I (+) I () V = 0V 150 nA IN IN CM I (+) I () V = 0V, T = +25C 5.0 50 nA IN IN CM A Input Bias Current I (+) or I () with Output in Linear Range, V = 0V, 250 nA IN IN CM Note 6 I (+) or I () with Output in Linear Range, V = 0V, 25 250 nA IN IN CM T = +25C, Note 6 A Note 5. At output switch point, V 1.4V, R = 0 , with V+ from 5V to 30V and over he full input O S commonmode range (0V to V+ 1.5V), at 25C. Note 6. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the reference or input lines.