TIP140 Silicon NPN Transistor Darlington Power Amp, Switch TO247 Type Package Description: The TIP140 is a silicon NPN Darlington transistor in a TO 247 type package designed for general purpose amplifier and low frequency switching applications. Features: High DC Current Gain: h = 1000 (Min) at I = 5A, V = 4V FE C CE Collector Emitter Sustaining Voltage: V = 60V (Min) at I = 30mA CEO(sus) C Absolute Maximum Ratings: (Note 1) CollectorEmitter Voltage, V ...................................................... 60V CEO Collector Base Voltage, V ......................................................... 60V CB EmitterBase Voltage, V ........................................................... 5V EB Collector Current, I C Continuous .................................................................. 10A Peak (Note 2) ................................................................ 15A Base Current, I ................................................................ 500mA B Total Power Dissipation (T = +25C), P ........................................... 125W C D Operating Junction Temperature Range, T .................................. 65 to +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 35.7 C/W thJA Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, dam- ages may occur and reliability may be affected. Note 2. 5ms, 10% Duty Cycle Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 30mA, I = 0, Note 3 60 V CEO(sus) C B Collector Cutoff Current I V = 60V, I = 0 1.0 mA CBO CB E I V = 30V, I = 0 2.0 mA CEO CE B Emitter Cutoff Current I V = 5V 2 mA EBO BE Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 3) DC Current Gain h V = 4V, I = 5A 1000 FE CE C V = 4V, I = 10A 500 CE C CollectorEmitter Saturation Voltage V I = 5A, I = 10mA 2.0 V CE(sat) C B I = 10A, I = 40mA 3.0 V C B BaseEmitter Saturation Voltage V I = 10A, I = 40mA 3.5 V BE(sat) C B BaseEmitter On Voltage V I = 10A, V = 4V 3.0 V BE(on) C CE Switching Characteristics Delay Time t V = 30V, I = 5A, I = 20mA, 0.15 s d CC C B Duty Cycle 2%, I = I , B1 B2 Rise Time t 0.55 s r R & R Varied, T = +25C C B J Storage Time t 2.5 s s Fall Time t 2.5 s f Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle 2%626 (15.9) .197 (5.0) Max .217 (5.5) .787 (20.0) .143 (3.65) Dia Max BC E C .157 (4.0) B .559 (14.2) Min E .215 (5.45) .047 (1.2) .094 (2.4)