TIP2955 Silicon PNP Transistor Power Amp, Switch TO247 Type Package Description: The TIP2955 is a silicon PNP transistor in a TO 247 type package designed for general purpose switching and amplifier applications. Features: DC Current Gain: h = 20 70 at I = 4A FE C Collector Emitter Saturation Voltage: V = 1.1V (Max) at I = 4A CE(sat) C Excellent Safe Operating Area Absolute Maximum Ratings: (Note 1) CollectorEmitter Voltage, V ...................................................... 60V CEO CollectorEmitter Voltage, V ...................................................... 70V CER Collector Base Voltage, V ........................................................ 100V CB EmitterBase Voltage, V ........................................................... 7V EB Continuous Collector Current, I ..................................................... 15A C Base Current, I .................................................................... 7A B Total Power Dissipation (T = +25C), P ............................................ 90W C D Derate Above +25 C ..................................................... 0.72W/ C Operating Junction Temperature Range, T .................................. 65 to +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R .................................... 1.39 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 35.7 C/W thJA Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Condi- tions is not implied. Extended exposure to stresses above the recommended Operation Conditions may affect device reliability. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 30mA, I = 0, Note 2 60 V CEO(sus) C B Collector Cutoff Current I V = 70V, R = 100 1.0 mA CER CE BE I V = 30V, I = 0 0.7 mA CEO CE B I V = 100V, V = 1.5V 5.0 mA CEV CE BE(off) Emitter Cutoff Current I V = 7V, I = 0 5 mA EBO BE C Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h V = 4V, I = 4A 20 70 FE CE C V = 4V, I = 10A 5 CE C CollectorEmitter Saturation Voltage V I = 4A, I = 400mA 1.1 V CE(sat) C B I = 10A, I = 3.3A 3.0 V C B BaseEmitter On Voltage V I = 4A, V = 4V 1.8 V BE(on) C CE Second Breakdown Second Breakdown Collector Current I V = 30V, t = 1.0s 3.0 A s/b CE with Base Forward Biased NonRepetitive Dynamic Characteristics Current Gain Bandwidth Product f I = 500mA, V = 10V, f = 1MHz 2.5 MHz T C CE SmallSignal Current Gain h V = 4V, I = 1A, f = 1kHz 15 kHz fe CE C Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%626 (15.9) .197 (5.0) Max .217 (5.5) .787 (20.0) .143 (3.65) Dia Max BC E .157 (4.0) .559 (14.2) Min .215 (5.45) .047 (1.2) .094 (2.4)