BAP50-03 NXP

BAP50-03 General purpose PIN diode Rev. 04 11 September 2009 Product data sheet 1. Product prole 1.1 General description General purpose PIN diode in a SOD323 small plastic SMD package. 1.2 Features n Low diode capacitance n Low diode forward resistance 1.3 Applications n General RF application 2. Pinning information Table 1. Discrete pinning Pin Description Simplied outline Graphic symbol 1 cathode 1 2 2 anode sym006 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BAP50-03 SC-76 plastic surface-mounted package 2 leads SOD323BAP50-03 NXP Semiconductors General purpose PIN diode 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V reverse voltage - 50 V R I forward current - 50 mA F P total power dissipation T =90 C - 500 mW tot sp T storage temperature - 65 +150 C stg T junction temperature - 65 +150 C j 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction 85 K/W th(j-sp) to soldering point 6. Characteristics Table 5. Characteristics T = 25 C unless otherwise specied. j Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 50 mA - 0.95 1.1 V F F V reverse voltage I =10 A 50 --V R R I reverse current V = 50 V - - 100 nA R R C diode capacitance f = 1 MHz see Figure 1 d V = 0 V - 0.4 - pF R V = 1 V - 0.3 0.55 pF R V = 5 V - 0.2 0.35 pF R r diode forward resistance f = 100 MHz see Figure 2 D 1 I = 0.5 mA -25 40 F 1 I =1mA -14 25 F 1 I =10mA -3 5 F 1 Guaranteed on AQL basis: inspection level S4, AQL 1.0. BAP50-03 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 11 September 2009 2 of 7