BAP64-02,115 NXP

BAP64-02 Silicon PIN diode Rev. 11 20 March 2019 Product data sheet 1 Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Very low series inductance For applications up to 6 GHz AEC-Q101 qualified 1.3 Applications RF attenuators and switches 2 Pinning information Table 1.Discrete pinning Pin Description Simplified outline Symbol 1 1 cathode 2 anode 1 2 sym006 1 The marking bar indicates the cathode. 3 Ordering information Table 2.Ordering information Type number Package Name Description Version BAP64-02 - plastic surface-mounted package 2 leads SOD523NXP Semiconductors BAP64-02 Silicon PIN diode 4 Marking Table 3.Marking Type number Marking code BAP64-02 S 5 Limiting values Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 175 V R I forward current - 100 mA F P total power dissipation T = 90 C - 715 mW tot sp T storage temperature -65 +150 C stg T junction temperature -65 +150 C j 6 Thermal characteristics Table 5.Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction 85 K/W th(j-sp) to solder point 7 Characteristics Table 6.Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 50 mA - 0.95 1.1 V F F I reverse current V = 60 V - - 10 A R R V = 20 V - - 1 A R C diode capacitance see Figure 1 f = 1 MHz d V = 0 V - 0.48 - pF R V = 1 V - 0.35 - pF R V = 20 V - 0.23 0.35 pF R 1 r diode forward resistance see Figure 2 f = 100 MHz D I = 0.5 mA - 20 40 F I = 1 mA - 10 20 F I = 10 mA - 2.0 3.8 F I = 100 mA - 0.7 1.35 F BAP64-02 All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 11 20 March 2019 2 / 9