BAR 50-02V H6327 Infineon

BAR50... Silicon PIN Diodes Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) Low forward resistance Very low harmonic distortion Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAR50-02L BAR50-02V BAR50-03W Type Package Configuration L (nH) Marking S BAR50-02L* TSLP-2-1 single, leadless 0.4 AB BAR50-02V SC79 single 0.6 a BAR50-03W SOD323 single 1.8 blue A 1 *BAR50-02L is not qualified according AEC Q101 2011-07-18 1BAR50... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 50 V Diode reverse voltage V R 100 mA Forward current I F mW Total power dissipation P tot BAR50-02L, T 130C 250 S BAR50-02V, T 120C 250 S BAR50-03W, T 115C 250 S Junction temperature T 150 C j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAR50-02L 80 BAR50-02V 120 BAR50-03W 140 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics - - 50 Reverse current I nA R V = 50 V R - 0.95 1.1 V Forward voltage V F I = 50 mA F 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-07-18 2