BT168GW NXP

BT168GW SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications Circuit breakers RCD/GFI/LCCB applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- 1 - - 600 V DRM state voltage V repetitive peak reverse - - 600 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I average on-state half sine wave T 112 C Fig. 1 - - 0.63 A T(AV) sp current I RMS on-state current half sine wave T 112 C Fig. 2 - - 1 A T(RMS) sp Fig. 3 Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C 20 50 200 A GT D T j Fig. 9 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors BT168GW SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 4 A K G 2 A anode sym037 3 G gate 1 2 3 4 mb mb connected to anode SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT168GW SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BT168GW All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 17 March 2014 2 / 15