BT169D,112 NXP

BT169D SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Sensitive gate Direct triggering from low power gate circuits and logic ICs 3. Applications Ignition circuits Lighting ballasts Protection circuits Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 400 V RRM voltage I average on-state half sine wave T 83 C Fig. 1 - - 0.5 A T(AV) lead current I RMS on-state current half sine wave T 83 C Fig. 2 - - 0.8 A T(RMS) lead Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 9 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C - 50 200 A GT D T j Fig. 7 Dynamic characteristics dV /dt rate of rise of off-state V = 268 V T = 125 C R = 1 k 500 800 - V/s D DM j GK voltage exponential waveform Fig. 12WeEn Semiconductors BT169D SCR Symbol Parameter Conditions Min Typ Max Unit V = 268 V T = 125 C exponential - 25 - V/s DM j waveform gate open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A K G 2 G gate sym037 3 K cathode 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT169D TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT169D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12