BT169D-L,116 NXP

BT169D-L SCR 5 September 2018 Product data sheet 1. General description Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Very sensitive gate 3. Applications Ignition circuits Low power latching circuits Protection / shut-down circuits: lighting ballasts Protection / shut-down circuits: Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 400 V RRM voltage I average on-state half sine wave T 83 C Fig. 1 - - 0.5 A T(AV) lead current I RMS on-state current half sine wave T 83 C Fig. 2 - - 0.8 A T(RMS) lead Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 9 A TSM j(init) state current t = 8.3 ms p half sine wave T = 25 C - - 8 A j(init) t = 10 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C - - 50 A GT D T j Fig. 7 Dynamic characteristics dV /dt rate of rise of off-state V = 268 V T = 125 C R = 1 k 500 800 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12WeEn Semiconductors BT169D-L SCR Symbol Parameter Conditions Min Typ Max Unit V = 268 V T = 125 C (V = 67% - 25 - V/s DM j DM of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A K G 2 G gate sym037 3 K cathode 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT169D-L TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT169D-L All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12