BTA212X-600B/B NXP

DISCRETE SEMICONDUCTORS DDATA SHEET BTA212X series B Three quadrant triacs high commutation Product specification September 1997 Semiconductors Product specification Three quadrant triacs BTA212X series B high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in circuits where high BTA212X- 500B 600B 800B static and dynamic dV/dt and high V Repetitive peak off-state 500 600 800 V DRM dI/dt can occur. These devices will voltages commutate the full rated rms current I RMS on-state current 12 12 12 A T(RMS) at the maximum rated junction I Non-repetitive peak on-state 95 95 95 A TSM temperature, without the aid of a current snubber. PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION case 1 main terminal 1 T2 T1 2 main terminal 2 3 gate G 12 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 1 1 V Repetitive peak off-state - 500 600 800 V DRM voltages I RMS on-state current full sine wave - 12 A T(RMS) T 56 C hs I Non-repetitive peak full sine wave TSM on-state current T = 25 C prior to j surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.200