BUK766R0-60E NXP

BUK766R0-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 75 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 182 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 4.58 6 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 10 V - 20 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package. Scan or click this QR code to view the latest information for this productNXP Semiconductors BUK766R0-60E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK766R0-60E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T = 25 C -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 1 - 75 A D mb GS T = 100 C V = 10 V Fig. 1 1 - 75 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 473 A DM mb p P total power dissipation T = 25 C Fig. 2 - 182 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C 1 - 75 A S mb I peak source current pulsed t 10 s T = 25 C - 473 A SM p mb BUK766R0-60E All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 2 / 12