X-On Electronics has gained recognition as a prominent supplier of BUK766R0-60E MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK766R0-60E MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK766R0-60E NXP

BUK766R0-60E electronic component of NXP
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Part No.BUK766R0-60E
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET, N-CH, 60V, 75A, D2PAK
Datasheet: BUK766R0-60E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8815 ea
Line Total: USD 1.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.8815
10 : USD 1.5372
100 : USD 1.1375
500 : USD 0.9761
800 : USD 0.7993
2400 : USD 0.784

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the BUK766R0-60E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK766R0-60E and other electronic components in the MOSFETs category and beyond.

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BUK766R0-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 75 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 182 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 4.58 6 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 10 V - 20 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package. Scan or click this QR code to view the latest information for this productNXP Semiconductors BUK766R0-60E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK766R0-60E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T = 25 C -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 1 - 75 A D mb GS T = 100 C V = 10 V Fig. 1 1 - 75 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 473 A DM mb p P total power dissipation T = 25 C Fig. 2 - 182 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C 1 - 75 A S mb I peak source current pulsed t 10 s T = 25 C - 473 A SM p mb BUK766R0-60E All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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