BUK7Y25-40B NXP

BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage I drain current V =10V T =25C --35.3A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --59.4W tot mb dissipation Static characteristics R drain-source V =10V I =20A - 2025m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 Avalanche ruggedness E non-repetitive I =35.3 A V 40 V --37 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =20A V =32V -5.12- nC GD D DS V = 10 V see Figure 14 GSBUK7Y25-40B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y25-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK7Y25-40B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 7 April 2010 2 of 14