BUK9514-55A,127 NXP

BUK9514-55A BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specication 1. Description N-channel enhancement mode eld-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9514-55A in SOT78 (TO-220AB) 2 BUK9614-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base g connected to drain (d) MBB076 s 2 13 MBK116 MBK106 12 3 2 SOT404 (D -PAK) SOT78 (TO-220AB)BUK9514-55A BUK9614-55A Philips Semiconductors TrenchMOS logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) - 55 V DS I drain current (DC) T =25 C V =5V - 73 A D mb GS P total power dissipation T =25 C - 149 W tot mb T junction temperature - 175 C j R drain-source on-state resistance T =25 C V =5V I =25A 12 14 m DSon j GS D T =25 C V = 4.5 V I =25A - 15 m j GS D 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 55 V DS V drain-gate voltage (DC) R =20k- 55 V DGR GS V gate-source voltage (DC) - 10 V GS V non-repetitive gate-source voltage t 50 s - 15 V GSM p I drain current (DC) T =25 C V =5V - 73 A D mb GS Figure 2 and 3 T = 100 C V =5V Figure 2 - 52 A mb GS I peak drain current T =25 C pulsed t 10 s - 266 A DM mb p Figure 3 P total power dissipation T =25 C Figure 1 - 149 W tot mb T storage temperature - 55 +175 C stg T operating junction temperature - 55 +175 C j Source-drain diode I reverse drain current (DC) T =25 C - 73 A DR mb I pulsed reverse drain current T =25 C pulsed t 10 s - 266 A DRM mb p Avalanche ruggedness W non-repetitive avalanche energy unclamped inductive load I =73A - 230 mJ DSS D V 55 V V =5V R =50 DS GS GS starting T =25 C mb 9397 750 07886 Philips Electronics N.V. 2001. All rights reserved. Product specication Rev. 01 7 Feb 2001 2 of 15