BUK9520-100B,127 NXP

BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC-Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V =5V T =25C --63 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 203 W tot mb dissipation Avalanche ruggedness E non-repetitive I =63 A V 100 V - - 222 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Static characteristics R drain-source V = 4.5 V I =25A - 16.4 22.3 m DSon GS D on-state resistance T = 25 C see Figure 11 j see Figure 12 V =5V I =25A - 16.2 20 m GS D T = 25 C see Figure 12 j see Figure 11NXP Semiconductors BUK9520-100B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (3-lead TO-220AB SC-46 SFM3) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9520-100B 3-lead plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78A TO-220AB TO-220AB SC-46 SFM3 BUK9520-100B 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 6 May 2009 2 of 12