X-On Electronics has gained recognition as a prominent supplier of BUK954R2-55B,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK954R2-55B,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK954R2-55B,127 NXP

BUK954R2-55B,127 electronic component of NXP
BUK954R2-55B,127 NXP
BUK954R2-55B,127 MOSFETs
BUK954R2-55B,127  Semiconductors

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Part No. BUK954R2-55B,127
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 55V 191A Automotive 3-Pin(3+Tab) TO-220AB Rail
Datasheet: BUK954R2-55B,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.5907 ea
Line Total: USD 36.73 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Rohs Mouser
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We are delighted to provide the BUK954R2-55B,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK954R2-55B,127 and other electronic components in the MOSFETs category and beyond.

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BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --300W tot mb dissipation Static characteristics R drain-source V =5V I =25A -3.5 4.2 m DSon GS D on-state T =25C j resistance see Figure 11 see Figure 12 V =10V I =25A -3.1 3.7 m GS D T =25C jBUK954R2-55B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --1.2 J DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -37 - nC GD GS D V =44 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK954R2-55B TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BUK954R2-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 8 June 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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