BUK9609-75A,118 NXP

BUK9609-75A N-channel TrenchMOS logic level FET Rev. 4 30 August 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS mb see Figure 3 see Figure 1 P total power T = 25 C see Figure 2 --230W tot mb dissipation Static characteristics R drain-source V =4.5 V I =25A T=25C --9.95m DSon GS D j on-state resistance V =10V I =25 A T = 25 C - 7.23 8.5 m GS D j V =5V I =25A T =25C -7.6 9 m GS D j see Figure 13 see Figure 14 Avalanche ruggedness E non-repetitive I =75A V 75 V --562mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) 1 Continuous current is limited by package.BUK9609-75A Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9609-75A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 75 V DS j j V drain-gate voltage R =20k -75 V DGR GS V gate-source voltage -10 10 V GS 1 I drain current T =100 C V = 5 V see Figure 1 -75 A D mb GS 1 T =25C V = 5 V see Figure 3 -75 A mb GS see Figure 1 I peak drain current T = 25 C pulsed t 10 s - 440 A DM mb p see Figure 3 P total power dissipation T = 25 C see Figure 2 - 230 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j V peak gate-source voltage pulsed t 50 s -15 15 V GSM p Source-drain diode 1 I source current T =25C -75 A S mb I peak source current pulsed t 10 s T = 25 C - 440 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =75 A V 75 V R =50 - 562 mJ DS(AL)S D sup GS avalanche energy V =5V T = 25 C unclamped GS j(init) 1 Continuous current is limited by package. BUK9609-75A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 30 August 2011 2 of 13