Document Number: MC13852 Freescale Semiconductor Rev. 2.0, 12/2010 Data Sheet: Advance Information MC13852 Package Information Plastic Package: MLPD-8 2.0 x 2.0 x 0.6 mm Case: 2128-01 MC13852 General Purpose Low Noise Ordering Information Amplifier with Bypass Switch Device Device Marking Package MC13852EP 852 MLPD-8 Contents: 1 Introduction 1 Introduction .1 The MC13852 is a cost-effective high gain LNA with 2 Electrical Specifications .3 low noise figure. This is the lower application frequency 3 Applications Information .8 4 Printed Circuit Board and Bills of Materials 14 version of the MC13851. 5 Scattering and Noise Parameters .18 An integrated bypass switch is included to preserve high 6 Packaging 27 input intercept performance in variable signal strength 7 Product Documentation .28 environments and boosts dynamic range. On-chip bias 8 Revision History .28 circuitry offers low system cost. The input and output match are external to allow maximum design flexibility. The external resistor used to set device current enables balancing required linearity with low current consumption. Gain is optimized for applications <1000 MHz. The MC13852 is fabricated with an advanced RF BiCMOS process using the eSiGe:C module and is available in the 2 2 mm MLPD-8 leadless package, offering a small, low height, easy-to-solder solution for applications with tight printed circuit board placement requirements. This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 20062010. All rights reserved. Introduction 1.1 Features The MC13852 is intended for applications from 400 to 1000 MHz the MC13851 is for applications >1000 MHz. Gain: 20.3 dB (typ) at 434 MHz, 18.7 dB (typ) at 900 MHz. Output third order intercept point (OIP3): 10.6 dBm at 434 MHz, 14.2 dBm (typ) dBm at 900 MHz. Noise Figure (NF): 1.65 dB (typ) at 434 MHz, 1.2 dB at 900 MHz. Output 1 dB compression point (P1dB): 7.8 dB m (typ) at 434 MHz, 9.6 dBm (typ) at 900 MHz. IP3 Boost Circuitry. Bypass mode return losses are comparable to act ive mode, for use in systems with filters and duplexers. Bypass mode improves dynamic range in variable signal strength environments. Integrated logic-controlled standb y mode with current drain < 1uA. Total supply current variable from 36 mA using an external bias resistor. Average current drain <0.6mA in a receiver lineup with 20% active / 80% bypass mode operation. On-chip bias sets the bias point. Bias stabilized for device and temperature variations. MLPD-8 leadless package with low parasitics. 434 MHz and 900 MHz application circuit evalua tion boards with characterization data are available. Available in tape and reel packaging. 1.2 Applications Ideal for use in any RF product that operates between 400 MHz and 1 GHz, and may be applied in: Buffer amplifiers Mixers IF amplifiers Voltage-controlled oscillators (VCOs) Use with transceivers requiring external LNAs RF smart metering Mobile: Cellular front-end LNA, 2-way radios Auto: RKE, key fob, TPMS Low current drain/long standby time for extended battery life applications Figure 1 shows a simplified block diagram, with the pinouts and the location of the pin 1 marking on the package. MC13852 Advance Information, Rev. 2.0 2 Freescale Semiconductor