DocumentNumber:MWE6IC9080N FreescaleSemiconductor Rev. 0, 4/2010 Technical Data RFLDMOSWidebandIntegrated MWE6IC9080NR1 PowerAmplifiers MWE6IC9080GNR1 The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage MWE6IC9080NBR1 structureisratedfor26to32Voltoperationandcoversalltypicalcellularbase station modulations. Typical GSM Performance: V =28Volts,I = 230 mA, I = DD DQ1 DQ2 865--960MHz,80WCW,28V 630 mA, P = 80Watts CW out GSM,GSMEDGE RFLDMOSWIDEBAND G PAE ps INTEGRATEDPOWERAMPLIFIERS Frequency (dB) (%) 920 MHz 29.0 49.7 940 MHz 28.8 51.6 CASE1618--02 960 MHz 28.5 52.3 TO--270WB--14 PLASTIC Capable of Handling 10:1 VSWR, 32 Vdc, 940 MHz, P = 128 Watts CW out MWE6IC9080NR1 (3 dB Input Overdrive from Rated P ), Designed for Enhanced Ruggedness out Stable into a 5:1 VSWR. All Spurs Below --60 dBc 1 mW to 80 Watts CW P out Typical P 1dB CompressionPoint 90Watts CW out CASE1621--02 Typical GSM EDGE Performance: V =28Volts,I = 230 mA, I = DD DQ1 DQ2 TO--270WB--14GULL 630 mA, P = 35Watts Avg. out PLASTIC MWE6IC9080GNR1 SR1 SR2 G PAE 400kHz 600kHz EVM ps Frequency (dB) (%) (dBc) (dBc) (%rms) 920 MHz 30.0 37.0 --62 --75 0.8 CASE1617--02 940 MHz 30.0 37.8 --62 --75 1.2 TO--272WB--14 960 MHz 29.5 38.0 --62 --75 1.5 PLASTIC MWE6IC9080NBR1 Features CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceScatteringParameters On--ChipMatching(50Ohm Input, DC Blocked) (1) IntegratedQuiescent Current Temperature Compensation with Enable/Disable Function IntegratedESD Protection 225C Capable Plastic Package RoHSCompliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. NC 1 V 2 DS1 V DS1 V 3 GS2 14 RF /V out DS2 V 4 GS1 V GS2 NC 5 RF 6 in V GS1 RF 7 in NC 8 RF /V V 9 13 RF RF /V GS1 out DS2 in out DS2 V 10 GS2 V 11 DS1 NC 12 V GS1 QuiescentCurrent (1) V TemperatureCompensation (Top View) GS2 Note: Exposed backside of the package is V DS1 thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +66 Vdc DSS Gate--Source Voltage V --0.5, +6 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Input Power P 20.5 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC GSM Application (Case Temperature 80C, Stage1, 28Vdc, I =230 mA 3.5 DQ1 P =80W CW, 940MHz) Stage2, 28Vdc, I =630 mA 0.52 out DQ2 GSM EDGE Application (Case Temperature 80C, Stage1, 28Vdc, I =230 mA 3.6 DQ1 P =40W CW, 940MHz) Stage2, 28Vdc, I =630 mA 0.54 out DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B (Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) III (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit Stage1OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =66Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1OnCharacteristics Gate Threshold Voltage V 1.5 2 3.5 Vdc GS(th) (V =10Vdc,I =33Adc) DS D Gate Quiescent Voltage V 2.7 Vdc GS(Q) (V =28Vdc,I =230mAdc) DS DQ1 Fixture Gate Quiescent Voltage V 15 17 19 Vdc GG(Q) (V =28Vdc,I =230 mAdc, Measured in FunctionalTest) DD DQ1 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at