NVT2001 NVT2002 Bidirectional voltage level translator for open-drain and push-pull applications Rev. 4 27 January 2014 Product data sheet 1. General description The NVT2001/02 are bidirectional voltage level translators operational from 1.0 V to 3.6 V (V ) and 1.8 V to 5.5 V (V ), which allow bidirectional voltage translations between ref(A) ref(B) 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull applications. Bit widths ranging from 1-bit or 2-bit are offered for level translation application with transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance and a pull-up of 197 . When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance connection exists between the An and Bn ports. The low ON-state resistance (R ) of the on switch allows connections to be made with minimal propagation delay. Assuming the higher voltage is on the Bn port when the Bn port is HIGH, the voltage on the An port is limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the drain pull-up supply voltage (V ) by the pull-up resistors. This functionality allows a pu(D) seamless translation between higher and lower voltages selected by the user without the need for directional control. When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O, respectively, allowing bidirectional data flow between ports. When EN is LOW, the translator switch is off, and a high-impedance state exists between ports. The EN input circuit is designed to be supplied by V . To ensure the high-impedance state during ref(B) power-up or power-down, EN must be LOW. All channels have the same electrical characteristics and there is minimal deviation from one output to another in voltage or propagation delay. This is a benefit over discrete transistor voltage translation solutions, since the fabrication of the switch is symmetrical. The translator provides excellent ESD protection to lower voltage devices, and at the same time protects less ESD-resistant devices. 2. Features and benefits Provides bidirectional voltage translation with no direction pin Less than 1.5 ns maximum propagation delay Allows voltage level translation between: 1.0 V V and 1.8 V, 2.5 V, 3.3 V or 5 V V ref(A) ref(B) 1.2 V V and 1.8 V, 2.5 V, 3.3 V or 5 V V ref(A) ref(B) 1.8 V V and 3.3 V or 5 V V ref(A) ref(B) 2.5 V V and 5 V V ref(A) ref(B) 3.3 V V and 5 V V ref(A) ref(B)NVT2001 NVT2002 NXP Semiconductors Bidirectional voltage level translator Low 3.5 ON-state connection between input and output ports provides less signal distortion 5 V tolerant I/O ports to support mixed-mode signal operation High-impedance An and Bn pins for EN = LOW Lock-up free operation Flow through pinout for ease of printed-circuit board trace routing ESD protection exceeds 4 kV HBM per JESD22-A114 and 1000 V CDM per JESD22-C101 3. Ordering information Table 1. Ordering information T = 40 C to +85 C. amb Type number Topside Number Package marking of bits Name Description Version 1 NVT2002DP N2002 2 TSSOP8 plastic thin shrink small outline package 8 leads SOT505-1 body width 3 mm 1 NVT2002GD N02 2 XSON8U plastic extremely thin small outline package no leads SOT996-2 8 terminals UTLP based body 3 2 0.5 mm 2 NVT2001GM N1X 1 XSON6 plastic extremely thin small outline package no leads SOT886 6 terminals body 1 1.45 0.5 mm 1 GTL2002 = NVT2002. 2 X will change based on date code. 3.1 Ordering options Table 2. Ordering options Type number Orderable Package Packing method Minimum Temperature part number order quantity NVT2002DP NVT2002DP,118 TSSOP8 Reel 13 Q1/T1 2500 T = 40 C to +85 C amb *Standard mark SMD NVT2002GD NVT2002GD,125 XSON8U Reel 7 Q3/T4 3000 T = 40 C to +85 C amb *Standard mark NVT2001GM NVT2001GM,115 XSON6 Reel 7 Q1/T1 5000 T = 40 C to +85 C amb *Standard mark SMD NVT2001 NVT2002 All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 4 27 January 2014 2 of 26