NX138AKH 60 V, N-channel Trench MOSFET 12 May 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection 3. Applications Relaydriver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 0.26 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 0.19 A T = 25 C - 2.8 4.2 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia NX138AKH 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 1 2 S source 3 D drain G 3 Transparent top view S DFN0606-3 (SOT8001) 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX138AKH DFN0606-3 plastic, leadless ultra small package 3 terminals body SOT8001 0.62 x 0.62 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code NX138AKH 00011110 reading direction pin 1 indication marking code reading example: (example) 1011 1101 reading direction aaa-029459 Fig. 1. DFN0606-3 (SOT8001) binary marking code description NX138AKH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 12 May 2021 2 / 14