PMEG10030ELP NXP

PMEG10030ELP 100 V, 3 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Extremely low leakage current I = 110 nA R Reverse voltage: V 100 V R Average forward current: I 3 A F(AV) High power capability due to clip-bonding technology High temperature T 175 C j Small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 160 C - - 3 A F(AV) sp current square wave V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 3 A t 300 s 0.02 - 710 770 mV F F p T = 25 C j I reverse current V = 100 V t 300 s 0.02 - 110 450 nA R R p T = 25 C j Scan or click this QR code to view the latest information for this product SOD128NXP Semiconductors PMEG10030ELP 100 V, 3 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 1 2 2 A anode sym001 SOD128 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG10030ELP SOD128 plastic surface-mounted package 2 leads SOD128 7. Marking Table 4. Marking codes Type number Marking code PMEG10030ELP DJ PMEG10030ELP All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 May 2015 2 / 15