PMEG6030EVP NXP

PMEG6030EVP High-temperature 60 V, 3 A Schottky barrier rectifier 4 March 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 3 A F(AV) Reverse voltage: V 60 V R Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature T 175 C j 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 165 C - - 3 A F(AV) sp current square wave V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 3 A t 300 s 0.02 - 420 475 mV F F p T = 25 C pulsed j I reverse current T = 25 C V = 60 V pulsed - 115 400 A R j R Scan or click this QR code to view the latest information for this product SOD128NXP Semiconductors PMEG6030EVP High-temperature 60 V, 3 A Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 1 2 2 A anode sym001 SOD128 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG6030EVP SOD128 plastic surface-mounted package 2 leads SOD128 7. Marking Table 4. Marking codes Type number Marking code PMEG6030EVP DB 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 60 V R j I forward current T = 160 C - 4.2 A F sp I average forward current = 0.5 f = 20 kHz T 95 C 1 - 3 A F(AV) amb square wave = 0.5 f = 20 kHz T 165 C - 3 A sp square wave I non-repetitive peak forward t = 8 ms T = 25 C square wave - 70 A FSM p j(init) current P total power dissipation T 25 C 2 - 750 mW tot amb 3 - 1250 mW 1 - 2500 mW T junction temperature - 175 C j PMEG6030EVP All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 4 March 2013 2 / 13