PMN20EN,115 NXP

PMN20EN 30 V, 6.7 A N-channel Trench MOSFET Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --30 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C --6.7 A D GS amb Static characteristics R drain-source on-state V =10V I =6.7 A T = 25 C - 16 20 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 4S source 132 mbb076 S 5 D drain SOT457 (TSOP6) 6 D drain SOT457NXP Semiconductors PMN20EN 30 V, 6.7 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN20EN TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN20EN SK 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 30 V DS j V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C -6.7 A D GS amb 1 V =10V T = 100 C -4.5 A GS amb I peak drain current T = 25 C single pulse t 10 s - 27 A DM amb p 2 P total power dissipation T =25C - 545 mW tot amb 1 - 1390 mW T = 25 C - 4170 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C -1.2 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMN20EN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 30 May 2011 2 of 15