X-On Electronics has gained recognition as a prominent supplier of PMN20EN,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMN20EN,115 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMN20EN,115 NXP

PMN20EN,115 electronic component of NXP
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Part No.PMN20EN,115
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET Small Signal MOSFET
Datasheet: PMN20EN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.2964 ea
Line Total: USD 1778.4 
Availability - 0
MOQ: 6000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 6000
Multiples : 1
6000 : USD 0.2964

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMN20EN,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMN20EN,115 and other electronic components in the MOSFETs category and beyond.

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PMN20EN 30 V, 6.7 A N-channel Trench MOSFET Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --30 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C --6.7 A D GS amb Static characteristics R drain-source on-state V =10V I =6.7 A T = 25 C - 16 20 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 4S source 132 mbb076 S 5 D drain SOT457 (TSOP6) 6 D drain SOT457NXP Semiconductors PMN20EN 30 V, 6.7 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN20EN TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN20EN SK 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 30 V DS j V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C -6.7 A D GS amb 1 V =10V T = 100 C -4.5 A GS amb I peak drain current T = 25 C single pulse t 10 s - 27 A DM amb p 2 P total power dissipation T =25C - 545 mW tot amb 1 - 1390 mW T = 25 C - 4170 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C -1.2 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMN20EN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 30 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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