HEXFET Power MOSFET Applications D V 40V DSS Brushed Motor drive applications BLDC Motor drive applications R typ. 1.9m DS(on) PWM Inverterized topologies max. 2.4m G Battery powered circuits I 180A D (Silicon Limited) Half-bridge and full-bridge topologies Electronic ballast applications I 90A S D (Package Limited) Synchronous rectifier applications Resonant mode power supplies D OR-ing and redundant power switches DC/DC and AC/DC converters S D G Benefits I-Pak D-Pak Improved Gate, Avalanche and Dynamic dV/dt IRFU7440PbF IRFR7440PbF Ruggedness Fully Characterized Capacitance and Avalanche GD S SOA Gate Drain Source Enhanced body diode dv/dt and dI/dt Capability Lead-Free RoHS Compliant containing no Lead, no Bromide, and no Halogen Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube/Bulk 75 IRFR7440PbF IRFR7440PbF D-PAK Tape and Reel 2000 IRFR7440TRPbF IRFU7440PbF I-PAK Tube/Bulk 75 IRFU7440PbF 180 8 LIMITED BY PACKAGE I = 90A D 160 140 6 120 100 4 80 T = 125C J 60 2 40 T = 25C 20 J 0 0 25 50 75 100 125 150 175 4 8 12 16 20 T , Case Temperature (C) V , Gate-to-Source Voltage (V) C GS Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R (on), Drain-to -Source On Resistance m( ) DS I , Drain Current (A) D Absolute Maximum Ratings Symbol Parameter Max. Units 180 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 125 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 90 I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) D C GS Pulsed Drain Current 760 I DM 140 Maximum Power Dissipation P T = 25C W D C 0.95 Linear Derating Factor W/C 20 Gate-to-Source Voltage V V GS 4.4 Peak Diode Recovery dv/dt V/ns Operating Junction and -55 to + 175 T J Storage Temperature Range C T STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 160 mJ AS (Thermally limited) Single Pulse Avalanche Energy E 376 AS (Thermally limited) I Avalanche Current A AR See Fig 15,16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.05 R JC C/W R Junction-to-Ambient (PCB Mount) 50 JA Junction-to-Ambient R 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A V Drain-to-Source Breakdown Voltage 40 V (BR)DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 28 mV/C (BR)DSS J D R Static Drain-to-Source On-Resistance 1.9 2.4 m V = 10V, I = 90A GS D DS(on) 2.8 m V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A DS GS D GS(th) V = 40V, V = 0V I Drain-to-Source Leakage Current 1 A DSS DS GS V = 40V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.6 G Calculated continuous current based on maximum allowable junction Pulse width 400 s duty cycle 2%. temperature. Bond wire current limit is 90A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.04mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 50, I = 90A, V =10V. G AS GS mended footprint and soldering techniques refer to application note AN-994. I 100A, di/dt 1306A/s, V V , T 175C. SD DD (BR)DSS J Limited by T starting T = 25C, L= 1mH, R = 50, I = 27A, V =10V. GS Jmax J G AS