PSMN5R6-100XS NXP

PSMN5R6-100XS N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A) Rev. 3 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Isolated package and conduction losses Suitable for standard level gate drive 1.3 Applications AC-to-DC power supply equipment Server power supplies Motor control Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25 C V =10V see Figure 1 - - 61.8 A D mb GS P total power dissipation T =25 C see Figure 2 --60 W tot mb Static characteristics R drain-source on-state resistance V =10V I =15A T =25C -4.3 5.6 m DSon GS D j see Figure 12 see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =15A V =50V see - 41.2 - nC GD GS D DS Figure 14 see Figure 15 Q total gate charge - 145 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 61.8 A - - 550 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS see Figure 3 TO-220FPSMN5R6-100XS NXP Semiconductors N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb mounting base isolated mbb076 S 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R6-100XS TO-220F plastic single-ended package isolated heatsink mounted SOT186A 1 mounting hole 3-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10 V T =25C see Figure 1 - 61.8 A D GS mb V =10 V T = 100 C see Figure 1 - 43.7 A GS mb I peak drain current pulsed t 10 s T =25C see Figure 4 - 247 A DM p mb P total power dissipation T =25C see Figure 2 -60 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 50 A S mb I peak source current pulsed t 10 s T = 25 C - 247 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C I =61.8 A V 100 V - 550 mJ DS(AL)S GS j(init) D sup avalanche energy unclamped R =50 see Figure 3 GS PSMN5R6-100XS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 6 March 2012 2 of 15