Product Information

Z0107NN0

Z0107NN0 electronic component of NXP

Datasheet
TRIAC, 4Q, 1A, 800V, SOT223

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6421 ea
Line Total: USD 3.21

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1
5 : USD 0.6421
10 : USD 0.4119
100 : USD 0.2769
500 : USD 0.2081
1000 : USD 0.1393
5000 : USD 0.1331

     
Manufacturer
Product Category
Brand
Peak Repetitive Off-State Voltage Vdrm
On State Rms Current Itrms
Triac Case Style
Gate Trigger Current Max Qi Igt
Gate Trigger Voltage Max Vgt
Peak Gate Power
Peak Non Rep Surge Current Itsm 50Hz
Holding Current Max Ih
No. Of Pins
Operating Temperature Max
Svhc
Thyristor Case
LoadingGif

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Z0107NN0 4Q Triac 4 April 2014 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface- mountable plastic package intended for applications requiring enhanced immunity to noise and direct interfacing to logic level ICs and low power gate drivers. 2. Features and benefits Direct interfacing to logic level ICs Enhanced current surge capability Enhanced noise immunity High blocking voltage capability Planar passivated for voltage ruggedness and reliability Surface-mountable package Triggering in all four quadrants Very sensitive gate 3. Applications General purpose low power motor control Home appliances Industrial process control Low power AC Fan controllers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 12.5 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p I RMS on-state current full sine wave T 105 C Fig. 1 - - 1 A T(RMS) sp Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 0.3 - 5 mA GT D T T = 25 C Fig. 9 j Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors Z0107NN0 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 0.3 - 5 mA D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2- G- 0.3 - 5 mA D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2- G+ 0.3 - 7 mA D T T = 25 C Fig. 9 j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate 1 2 3 4 T2 main terminal 2 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version Z0107NN0 SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code Z0107NN0 107NN0 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 800 V DRM I RMS on-state current full sine wave T 105 C Fig. 1 - 1 A T(RMS) sp Fig. 2 Fig. 3 Z0107NN0 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 4 April 2014 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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