Photomicrosensor (Transmissive) EE-SJ3 Series Be sure to read Precautions on page 25. Dimensions Features High-resolution model with a 0.2-mm-wide sensing aperture, high- Note: All units are in millimeters unless otherwise indicated. sensitivity model with a 1-mm-wide sensing aperture, and model 0.3 Center mark with a horizontal sensing aperture are available. Absolute Maximum Ratings (Ta = 25C) 6.2 Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) F 0.2 Pulse forward I 1 A (see note 2) FP current Reverse voltage V 4 V R 10.2 Detector CollectorEmit- V 30 V 7.20.2 CEO ter voltage EmitterCollec- V --- ECO 6 tor voltage Four, 0.5 Four, 0.25 Collector cur- I 20 mA C 7.60.3 rent 2.540.2 Cross section BB Collector dissi- P 100 mW (see note C Cross section AA pation 1) Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to 100C Model Aperture (a x b) Soldering temperature Tsol 260C EE-SJ3-C 2.1 x 1.0 (see note 3) EE-SJ3-D 2.1 x 0.2 Internal Circuit Note: 1. Refer to the temperature rating chart if the ambient temper- EE-SJ3-G 0.5 x 2.1 ature exceeds 25C. K C 2. The pulse width is 10 s maximum with a frequency of Unless otherwise specified, the 100 Hz. tolerances are as shown below. 3. Complete soldering within 10 seconds. A E Dimensions Tolerance 3 mm max. 0.3 Terminal No. Name 3 < mm 6 0.375 A Anode 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 C Collector E Emitter 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition EE-SJ3-C EE-SJ3-D EE-SJ3-G Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wave- 940 nm typ. I = 20 mA P F length Detector Light current I 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter satu- V (sat) 0.1 V typ., --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. 0.4 V max. I = 0.1 mA L Peak spectral sensitivity 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 s typ. V = 5 V, CC R = 100 , Falling time tf 4 s typ. L I = 5 mA L 110 EE-SJ3 Series Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C IF V = 10 V CE Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) Forward voltage V (V) F F Ambient temperature Ta (C) Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient Voltage Characteristics (EE-SJ3-G) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (EE-SJ3-D) (EE-SJ3-G) V = 5 V CC I = 20 mA I = 20 mA F F Ta = 25C V = 10 V V = 10 V CE CE Ta = 25C Ta = 25C Center of optical axis 0 + d Center of optical axis Load resistance R (k) L Distance d (mm) Distance d (mm) Sensing Position Characteristics Response Time Measurement (EE-SJ3-C) Circuit I = 20 mA F V = 10 V CE Input Ta = 25C Center of optical axis 90 % Output 10 % Input Output Distance d (mm) EE-SJ3 Series Photomicrosensor (Transmissive) 111 Response time tr, tf (s) Relative light current I (%) L Forward current I (mA) Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L