X-On Electronics has gained recognition as a prominent supplier of EE-SX3081 Optical Switches, Transmissive, Photo IC Output across the USA, India, Europe, Australia, and various other global locations. EE-SX3081 Optical Switches, Transmissive, Photo IC Output are a product manufactured by Omron. We provide cost-effective solutions for Optical Switches, Transmissive, Photo IC Output, ensuring timely deliveries around the world.

EE-SX3081 Omron

EE-SX3081 electronic component of Omron
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See Product Specifications
Part No.EE-SX3081
Manufacturer: Omron
Category: Optical Switches, Transmissive, Photo IC Output
Description: Optical Switches, Transmissive, Photo IC Output With IC w/Detector 4.5 - 16VDC Dark ON
Datasheet: EE-SX3081 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.934 ea
Line Total: USD 3.93 
Availability - 23
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
310
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 10
10 : USD 3.4625
200 : USD 2.6875
400 : USD 2.6125
600 : USD 2.575
1000 : USD 2.4625
2600 : USD 2.4
5000 : USD 2.3375
7600 : USD 2.3

573
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.948
10 : USD 2.838
25 : USD 2.772
50 : USD 2.618
100 : USD 2.563
200 : USD 2.376
600 : USD 2.31
1000 : USD 2.101
2600 : USD 2.068

23
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.934
9 : USD 2.086
23 : USD 1.974

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Slot Width
Aperture Width
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
If - Forward Current
Height
Length
Output Type
Sensing Method
Termination Style
Wavelength
Width
Brand
Mounting Style
Number Of Channels
Cnhts
Fall Time
High Level Output Voltage
Hts Code
Ir - Reverse Current
Low Level Output Current
Low Level Output Voltage
Mxhts
Operating Supply Voltage
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
Vr - Reverse Voltage
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We are delighted to provide the EE-SX3081 from our Optical Switches, Transmissive, Photo IC Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EE-SX3081 and other electronic components in the Optical Switches, Transmissive, Photo IC Output category and beyond.

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Photomicrosensor (Transmissive) EE-SX3081/-SX4081 Be sure to read Precautions on page 25. Dimensions Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC Four, C0.3 Directly connects with C-MOS and TTL. 50.1 13.7+0.3 High resolution with a 0.5-mm-wide sensing aperture. Two, C10.3 Dark ON model (EE-SX3081) Light ON model (EE-SX4081) 2.50.2 7.50.2 Optical Absolute Maximum Ratings (Ta = 25C) 100.2 8.50.1 axis 6.50.1 2.5+0.1 Item Symbol Rated value 6.20.5 8.20.5 Emitter Forward current I 50 mA F Five, 0.250.1 (Five, 0.50.1) (see note 1) Reverse voltage V 4 V (10.5) Cross section AA (2.5) R Detector Power supply volt- V 16 V CC Cross section BB age Output voltage V 28 V OUT Output current I 16 mA OUT Internal Circuit Permissible output P 250 mW (see OUT K V dissipation note 1) O Ambient tem- Operating Topr 40C to 75C Unless otherwise specified, the perature Storage Tstg 40C to 85C A G tolerances are as shown below. Soldering temperature Tsol 260C Dimensions Tolerance (see note 2) Terminal No. Name A Anode 3 mm max. 0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25C. 3 < mm 6 0.375 2. Complete soldering within 10 seconds. V Power supply 6 < mm 10 0.45 (Vcc) 10 < mm 18 0.55 O Output (OUT) 18 < mm 30 0.65 G Ground (GND) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wave- 940 nm typ. I = 20 mA P F length Detector Low-level output volt- V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX3081), OL CC OL F age I = 8 mA (EE-SX4081) F High-level output volt- V 15 V min. V = 16 V, R = 1 k, I = 8 mA (EE-SX3081), OH CC L F age I = 0 mA (EE-SX4081) F Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivi- 870 nm typ. V = 4.5 to 16 V P CC ty wavelength LED current when output is OFF I 8 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis H 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 s typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 s typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 3) PHL PLH CC F OL 122 EE-SX3081/-SX4081 Photomicrosensor (Transmissive)3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX4081. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input Output 2. The value of the response frequency is measured Output by rotating the disk as shown below. 2.1 mm EE-SX3081 EE-SX4081 Disk 0.5 mm 0.5 mm Engineering Data Note: The values in the parentheses apply to the EE-SX4081. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25C R = 1 k L Ta = 30C Ta = 25C I OFF (I ON) FT FT Ta = 70C I ON (I OFF) FT FT Forward voltage V (V) Supply voltage V (V) F CC Ambient temperature Ta (C) Low-level Output Voltage vs. Am- Low-level Output Voltage vs. LED Current vs. Ambient Temper- bient Temperature Characteristics Output Current (Typical) ature Characteristics (Typical) (Typical) Ta = 25C V = 5 V CC V = 5 V CC R = 330 V = 5 V L CC I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (C) Ambient temperature Ta (C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25C Ta = 25C R = 330 I = 0 mA (15 mA) L I = 15 mA F F Ta = 25C V = 5 V CC R = 330 L V OUT n = repeat 20 times (EE-SX3 ) V OUT d = 0.01 mm 1 (EE-SX4 ) Center of optical axis Supply voltage V (V) CC Forward current I (mA) Distance d (mm) F EE-SX3081/-SX4081 Photomicrosensor (Transmissive) 123 LED current I (mA) FT Forward current I (mA) Current consumption Icc (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Forward current I (mA) Response delay time t , t (s) F PHL PLH Output transistor LED current I (mA) Low level output voltage V (V) FT OL

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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