1N4933, 1N4934, 1N4935, 1N4936, 1N4937 Axial-Lead Glass Passivated Fast Recovery Rectifiers www.onsemi.com Axial lead, fast recovery rectifiers are designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling FAST RECOVERY RECTIFIERS diodes. A complete line of fast recovery rectifiers having typical 1.0 AMPERE, 50600 VOLTS recovery time of 150 nanoseconds providing high efficiency at frequencies to 250 kHz. Features Shipped in Plastic Bags 1,000 per Bag Available Tape and Reeled 5,000 per Reel, by Adding a RL Suffix to the Part Number These are PbFree Devices* Mechanical Characteristics: Case: Epoxy, Molded AXIAL LEAD CASE 59 Weight: 0.4 Gram (Approximately) STYLE 1 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band MARKING DIAGRAM *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques A Reference Manual, SOLDERRM/D. 1N493x YYWW A =Assembly Location 1N493x =Device Number x= 3, 4, 5, 6 or 7 YY =Year WW =Work Week =PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: June, 2018 Rev. 13 1N4933/D1N4933, 1N4934, 1N4935, 1N4936, 1N4937 MAXIMUM RATINGS (Note 1) Rating Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit Peak Repetitive Reverse Voltage V 50 100 200 400 600 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R NonRepetitive Peak Reverse Voltage V 75 150 250 450 650 V RSM RMS Reverse Voltage V 35 70 140 280 420 R(RMS) Average Rectified Forward Current I 1.0 A O (Single phase, resistive load, T = 75C) (Note 2) A NonRepetitive Peak Surge Current I 30 A FSM (Surge applied at rated load conditions) Operating Junction Temperature Range T T 65 to +150 C J, stg Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Ratings at 25C ambient temperature unless otherwise specified. 2. Derate by 20% for capacitive loads. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient (Typical Printed Circuit Board Mounting) R 65 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Instantaneous Forward Voltage (I = 3.14 Amp, T = 150C) v 1.0 1.2 V F J F Forward Voltage (I = 1.0 Amp, T = 25C) V 1.05 1.2 V F A F Reverse Current (Rated DC Voltage) T = 25C I 1.0 5.0 A A R T = 100C 50 100 A REVERSE RECOVERY CHARACTERISTICS Reverse Recovery Time (I = 1.0 Amp to V = 30 Vdc) t 150 200 ns F R rr (I = 15 Amp, di/dt = 10 A/ s) 175 300 FM Reverse Recovery Current (I = 1.0 Amp to V = 30 Vdc) I 1.0 2.0 A F R RM(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Indicates JEDEC Registered Data for 1N4933 Series. 10 1.0E03 T = 150C C 1.0E04 T = 125C C 1.0E05 T = 100C C T = 150C 1 C T = 125C C 1.0E06 T = 100C C 1.0E07 T = 25C C T = 25C C 0.1 1.0E08 0.4 0.6 0.8 1 1.2 1.4 0 100 200 300 400 500 600 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current www.onsemi.com 2 I , FORWARD CURRENT (A) F I , REVERSE CURRENT (A) R
