1SMB11CAT3G ON Semiconductor

1SMB10CAT3G Series, SZ1SMB10CAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors 1SMB10CAT3G Series, SZ1SMB10CAT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) T = 25C, Pulse Width = 1 ms P 600 W L PK DC Power Dissipation T = 75C Measured Zero Lead Length (Note 2) P 3.0 W L D Derate Above 75C 40 mW/C Thermal Resistance from JunctiontoLead 25 C/W R JL DC Power Dissipation (Note 3) T = 25C P 0.55 W A D Derate Above 25C 4.4 mW/C Thermal Resistance from JunctiontoAmbient R 226 C/W JA Operating and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 s, nonrepetitive 2. 1 square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec *Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V C PP R C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional TVS