Field Effect Transistor - N-Channel, Enhancement Mode 2N7002DW Features www.onsemi.com Dual NChannel MOSFET Low OnResistance Low Gate Threshold Voltage Low Input Capacitance 1 Fast Switching Speed SC88/SC706/SOT363 Low Input/Output Leakage CASE 419B02 UltraSmall Surface Mount Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM Compliant 2NM ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Units V DrainSource Voltage 60 V DSS 2N = Specific Device Code M = Assembly Operation Month V DrainGate Voltage (R 1.0 M ) 60 V DGR GS V GateSource Voltage Continuous 20 V GSS PIN CONNECTIONS Pulsed 40 D2 G1 S1 I Drain Current Continuous 115 mA D Continuous 73 at 100C Pulsed 800 T , T Junction and Storage Temperature 55 to +150 C J STG S2 G2 D1 1 Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of this data sheet. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit P Total Device Dissipation 200 mW D Derate Above T = 25C 1.6 mW/C A R Thermal Resistance, JunctiontoAmbient (Note 1) 415 C/W JA 1. Device mounted on FR4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2020 Rev. 3 2N7002DW/D2N7002DW ORDERING INFORMATION Part Number Top Mark Package Shipping 2N7002DW 2N SC706 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS (Note 2) BV DrainSource Breakdown Voltage V =0V, I =10 A 60 78 V DSS GS D I Zero Gate Voltage Drain Current V =60V, V =0V 0.001 1.0 A DSS DS GS V =60V, V =0V, T = 125 C 7 500 DS GS J I GateBody Leakage V = 20 V, V =0V 0.2 10 nA GSS GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V =V , I = 250 A 1.00 1.76 2.0 V GS(th) DS GS D R Static DrainSource V =5V, I = 0.05 A 1.6 7.5 DS(on) GS D OnResistance V =10V, I = 0.5 A 2.0 GS D V =10V, I = 0.5 A, T = 125 C 2.53 13.5 GS D J I OnState Drain Current V =10V, V = 7.5 V 0.50 1.43 A D(on) GS DS g Forward Transconductance V =10V, I = 0.2 A 80.0 356.5 mS FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V =25V, V = 0 V, f = 1.0 MHz 37.8 50 pF iss DS GS C Output Capacitance 12.4 25 pF oss C Reverse Transfer Capacitance 6.5 7 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn-On Delay Time V =30V, I = 0.2 A, V =10V, 5.85 20 ns D(ON) DD D GEN R = 150 , R =25 L GEN t Turn-Off Delay Time 12.5 20 ns D(OFF) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Short duration test pulse used to minimize selfheating effect. TYPICAL PERFORMANCE CHARACTERISTICS 1.6 3.0 V = 3 V GS 4 V V = 10 V 4.5 V 1.4 GS 5 V 6 V 1.2 2.5 5 V 1.0 4 V 0.8 2.0 0.6 10 V 0.4 9 V 1.5 3 V 8 V 0.2 7 V 2 V 0.0 1.0 0 1 2 345 67 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 V ,DRAINSOURCE VOLTAGE (V) I , DRAINSOURCE CURRENT (A) DS D Figure 1. OnRegion Characteristics Figure 2. OnResistance Variation with Gate Voltage and Drain Current www.onsemi.com 2 I , DRAIN SOURCE CURRENT (A) D R (on), DRAINSOURCE DS ONRESISTANCE ( )