Ordering number : EN2042B 2SD1685 Bipolar Transistor 2SD1685 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =50V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =5V, I =0A 100 nA EBO EB C h1V =2V, I =500mA 120* 560* FE CE C DC Current Gain h2V =2V, I =3A 95 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 120 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 45 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =3A, I =60mA 220 500 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =3A, I =60mA 1.5 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 20 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 6 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 300 ns stg Fall Time t 40 ns f : The 2SD1685 is classi ed by 500mA h as follows : * FE Rank E F G h 120 to 200 160 to 320 280 to 560 FE Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R B V R R L 5 50 + + 100 F 470 F V = --5V V =10V BE CC I =10I = --10I =2A C B1 B2 Ordering Information Device Package Shipping memo 2SD1685G TO-126ML 200pcs./bag Pb Free 2SD1685F TO-126ML 200pcs./bag I -- V I -- V C CE C CE 5 5 4 4 3 3 2 2 1 1 I =0mA I =0mA B B 0 0 01 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V -- V ITR10012 Collector-to-Emitter Voltage, V -- V ITR10013 CE CE No.2042-2/6 15mA 10mA 5mA 5mA 20mA 15mA 10mA 20mA 30mA 30mA 40mA 40mA 50mA 60mA Collector Current, I -- A C Collector Current, I -- A C