Ordering number : ENA1507A ATP212 N-Channel Power MOSFET ATP212 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =18A 35 S DS D R (on)1 I =18A, V =10V 17 23 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =9A, V =4.5V 23 33 m DS D GS R (on)3 I =5A, V =4V 25 37 m DS D GS Input Capacitance Ciss 1820 pF Output Capacitance Coss V =20V, f=1MHz 150 pF DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 16 ns d Rise Time t 110 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 125 ns d Fall Time t 87 ns f Total Gate Charge Qg 34.5 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =35A 6.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 6.8 nC Diode Forward Voltage V I =35A, V =0V 0.96 1.2 V SD S GS Switching Time Test Circuit V V =30V IN DD 10V 0V I =18A D V IN R =1.67 L D V OUT PW=10s D.C.1% G ATP212 P.G 50 S Ordering Information Device Package Shipping memo ATP212-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1507-2/7