Ordering number : ENA1712A ATP214 N-Channel Power MOSFET ATP214 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =38A 100 S DS D R (on)1 I =38A, V =10V 6.2 8.1 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =19A, V =4.5V 8.2 11.5 m DS D GS R (on)3 I =10A, V =4V 9.2 14 m DS D GS Input Capacitance Ciss 4850 pF Output Capacitance Coss V =20V, f=1MHz 370 pF DS Reverse Transfer Capacitance Crss 280 pF Turn-ON Delay Time t (on) 30 ns d Rise Time t 240 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 360 ns d Fall Time t 250 ns f Total Gate Charge Qg 96 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =75A 18.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 18 nC Diode Forward Voltage V I =75A, V =0V 0.93 1.2 V SD S GS Switching Time Test Circuit V V =30V IN DD 10V 0V I =38A D V IN R =0.79 L D V OUT PW=10s D.C.1% G ATP214 P.G 50 S Ordering Information Device Package Shipping memo ATP214-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1712-2/7