X-On Electronics has gained recognition as a prominent supplier of CAT25128HU4I-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT25128HU4I-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAT25128HU4I-GT3 ON Semiconductor

CAT25128HU4I-GT3 electronic component of ON Semiconductor
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Part No.CAT25128HU4I-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 128KB SPI SER CMOS EEPROM
Datasheet: CAT25128HU4I-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6666 ea
Line Total: USD 0.67 
Availability - 2754
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2754
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6666
10 : USD 0.572
100 : USD 0.528
500 : USD 0.517
1000 : USD 0.4983
3000 : USD 0.4488
6000 : USD 0.4257
9000 : USD 0.4191
24000 : USD 0.4114

   
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We are delighted to provide the CAT25128HU4I-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT25128HU4I-GT3 and other electronic components in the EEPROM category and beyond.

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CAT25128 128-Kb SPI Serial CMOS EEPROM Description The CAT25128 is a 128Kb Serial CMOS EEPROM device internally organized as 16Kx8 bits. This features a 64byte page write CAT25128 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS MATURE PRODUCT (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, V = 5.5 V, 10 MHz / 40C to 85C 2 mA CCR CC (Read Mode) SO open 5 MHz / 40C to 125C 2 mA I Supply Current Write, V = 5.5 V, 10 MHz / 40C to 85C 4 mA CCW CC (Write Mode) SO open 5 MHz / 40C to 125C 4 mA I Standby Current V = GND or V , CS = V , T = 40C to +85C 1 A SB1 IN CC CC A WP = V , HOLD = V , CC CC T = 40C to +125C 3 A V = 5.5 V A CC I Standby Current V = GND or V , CS = V , T = 40C to +85C 4 A SB2 IN CC CC A WP = GND, HOLD = GND, T = 40C to +125C 5 A V = 5.5 V A CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V > 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V > 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V > 1.8 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V > 1.8 V, I = 100 A V 0.2 V V OH2 CC OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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