CAT25256 256-Kb SPI Serial CMOS EEPROM Description The CAT25256 is a 256Kb Serial CMOS EEPROM device internally organized as 32Kx8 bits. This features a 64byte page write www.onsemi.com buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25256 device. The device features SOIC8 UDFN8 SOIC8 software and hardware write protection, including partial as well as V SUFFIX HU4 SUFFIX X SUFFIX CASE 751BD CASE 517AZ CASE 751BE full array protection. OnChip ECC (Error Correction Code) makes the device suitable for high reliability applications.* Features 20 MHz (5 V) SPI Compatible PDIP8 TSSOP8 L SUFFIX Y SUFFIX 1.8 V to 5.5 V Supply Voltage Range CASE 646AA CASE 948AL SPI Modes (0,0) & (1,1) 64byte Page Write Buffer PIN CONFIGURATIONS Additional Identification Page with Permanent Write Protection 1 (New Product) CS V CC SO HOLD Selftimed Write Cycle WP SCK V Hardware and Software Protection SS SI Block Write Protection PDIP (L), SOIC (V, X), TSSOP (Y), UDFN (HU4) Protect 1/4, 1/2 or Entire EEPROM Array (Top View) Low Power CMOS Technology 1,000,000 Program/Erase Cycles ** Not recommended for new designs. 100 Year Data Retention Industrial and Extended Temperature Range PIN FUNCTION 8lead PDIP, SOIC, TSSOP and 8pad UDFN Packages Pin Name Function This Device is PbFree, Halogen Free/BFR Free, and RoHS CS Chip Select Compliant SO Serial Data Output V CC WP Write Protect V Ground SS SI SI Serial Data Input CS SCK Serial Clock SO CAT25256 WP HOLD Hold Transmission Input HOLD V Power Supply CC SCK The exposed pad for the UDFN package can be left floating or connected to Ground. V SS Figure 1. Functional Symbol ORDERING INFORMATION See detailed ordering and shipping information in the package * Available for New Product (Rev. E) dimensions section on page 19 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 8 CAT25256/DCAT25256 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS MATURE PRODUCT (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, V = 5.5 V, 10 MHz / 40C to 85C 2 mA CCR CC (Read Mode) SO open 5 MHz / 40C to 125C 2 mA I Supply Current Write, V = 5.5 V, 10 MHz / 40C to 85C 4 mA CCW CC (Write Mode) SO open 5 MHz / 40C to 125C 4 mA I Standby Current V = GND or V , CS = V , T = 40C to +85C 1 A SB1 IN CC CC A WP = V , HOLD = V , CC CC T = 40C to +125C 3 A V = 5.5 V A CC I Standby Current V = GND or V , CS = V , T = 40C to +85C 4 A SB2 IN CC CC A WP = GND, HOLD = GND, T = 40C to +125C 5 A V = 5.5 V A CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V > 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V > 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V > 1.8 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V > 1.8 V, I = 100 A V 0.2 V V OH2 CC OH CC www.onsemi.com 2