DATA SHEET www.onsemi.com EEPROM Serial 512-Kb SPI CAT25512 SOIC8 UDFN8 V SUFFIX HU5 SUFFIX Description CASE 751BD CASE 517BU The CAT25512 is a EEPROM Serial 512Kb SPI device internally organized as 64Kx8 bits. This features a 128byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) TSSOP8 SOIC8 WIDE X SUFFIX Y SUFFIX lines. The HOLD input may be used to pause any serial CASE 751BE CASE 948AL communication with the CAT25512 device. The device features software and hardware write protection, including partial as well as PIN CONFIGURATIONS full array protection. OnChip ECC (Error Correction Code) makes the device suitable CS V CC for high reliability applications. 1 SO HOLD Features SCK WP 20 MHz SPI Compatible V SI SS 1.8 V to 5.5 V Supply Voltage Range SPI Modes (0,0) & (1,1) SOIC (V, X), TSSOP (Y), UDFN (HU5) 128byte Page Write Buffer (Top View) Additional Identification Page with Permanent Write Protection Selftimed Write Cycle PIN FUNCTION Hardware and Software Protection Pin Name Function Block Write Protection CS Chip Select 1 1 Protect / , / or Entire EEPROM Array 4 2 SO Serial Data Output Low Power CMOS Technology WP Write Protect 1,000,000 Program/Erase Cycles V Ground SS 100 Year Data Retention SI Serial Data Input Industrial and Extended Temperature Range SOIC, TSSOP 8lead, UDFN 8pad SCK Serial Clock This Device is PbFree, Halogen Free/BFR Free, and RoHS HOLD Hold Transmission Input Compliant V Power Supply CC V CC ORDERING INFORMATION See detailed ordering and shipping information in the package SI dimensions section on page 11 of this data sheet. CS CAT25512 SO WP HOLD SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2021 Rev. 12 CAT25512/DCAT25512 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Max Units N (Note 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Write Mode: groups of 4 bytes, 25C. 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, SO open / V = 1.8 V, f = 5 MHz 1.2 mA CCR CC SCK (Read Mode) 40C to +85C V = 2.5 V, f = 10 MHz 1.8 mA CC SCK V = 5.5 V, f = 20 MHz 3 mA CC SCK Read, SO open / 2.5 V < V < 5.5 V, 3 mA CC 40C to +125C f = 10 MHz SCK I Supply Current Write, CS = V / 1.8 V < V < 5.5 V 2 mA CCW CC CC (Write Mode) 40C to +85C Write, CS = V / 2.5 V < V < 5.5 V 2 mA CC CC 40C to +125C I Standby Current V = GND or V , T = 40C to +85C 1 A SB1 IN CC A CS = V , WP = V , CC CC HOLD = V , CC T = 40C to +125C 3 A V = 5.5 V CC I Standby Current V = GND or V , T = 40C to +85C 3 A SB2 IN CC A CS = V , WP = GND, CC HOLD = GND, T = 40C to +125C 5 A A V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V 2 2 A LO CC Current V = GND or V OUT CC V Input Low Voltage V 2.5 V 0.5 0.3V V IL1 CC CC V Input High Voltage V 2.5 V 0.7V V + 0.5 V IH1 CC CC CC V Input Low Voltage V < 2.5 V 0.5 0.25V V IL2 CC CC V Input High Voltage V < 2.5 V 0.75V V + 0.5 V IH2 CC CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V 2.5 V, I = 1.6 mA V 0.8V V OH1 CC OH CC V Output Low Voltage V < 2.5 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V < 2.5 V, I = 100 A V 0.2V V OH2 CC CC OH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2