TFYM CAT4201 350 mA High Efficiency Step Down LED Driver Description The CAT4201 is a high efficiency stepdown converter optimized to drive high current LEDs. A patented switching control algorithm www.onsemi.com allows highly efficient and accurate LED current regulation. A single RSET resistor sets the full scale LED string current up to 350 mA from supplies as high as 36 V. The switching architecture of the CAT4201 results in extremely low 5 1 internal power dissipation allowing the device to be housed in a tiny package without the need for dedicated heat sinking. The device is TSOT23 compatible with switching frequencies of up to 1 MHz, making it ideal for TD SUFFIX CASE 419AE applications requiring small footprint and low value external inductors. Analog dimming and LED shutdown control is provided via a single input pin, CTRL. Additional features include overload current protection PIN CONNECTIONS AND and thermal shutdown. The device is available in the low profile 5lead MARKING DIAGRAMS (Top Views) thin SOT23 package ideal for space constrained applications. 1 VBAT CTRL Features GND LED Drive Current up to 350 mA SW Compatible with 12 V and 24 V Standard Systems RSET Handles Transients up to 40 V TSOT23 Single Pin Control and Dimming Function TF = Specific Device Code Y = Production Year (Last Digit) Power Efficiency up to 94% M = Production Month: (19, O, N, D) Drives LED Strings of up to 32 V Open and Short LED Protection Parallel Configuration for Higher Output Current ORDERING INFORMATION TSOT23 5lead Package Device Package Shipping These Devices are PbFree, Halogen Free/BFR Free and are RoHS CAT4201TDGT3 TSOT23 3,000/ Compliant (PbFree) Tape & Reel Applications * Plated Finish: NiPdAu 12 V and 24 V Lighting Systems Automotive and Aircraft Lighting General Lighting, High Brightness 350 mA LEDs VBAT 9 V C1 CAT4201 D C2 300 mA 4.7 F VBAT 10 F RSET L R1 CTRL SW 10 k 22 H GND D: ON Semiconductor MBR0540 L: Sumida CDRH6D26220 See Table 4 on page 6 for external component selection. Figure 1. Typical Application Circuit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2015 Rev. 9 CAT4201/DCAT4201 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units VBAT, SW, CTRL 0.3 to +40 V RSET 0.3 to +5 V Switch SW peak current 1 A Storage Temperature Range 65 to +160 C Junction Temperature Range 40 to +150 C Lead Temperature 300 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. RECOMMENDED OPERATING CONDITIONS Parameters Ratings Units VBAT voltage (Notes 1, 2) 6.5 to 36 (Note 1) V SW voltage 0 to 36 V Ambient Temperature Range 40 to +125 C LED Current 50 to 350 mA Switching Frequency 50 to 1000 kHz Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 1. The VBAT pin voltage should be at least 3 V greater than the total sum of the LED forward voltages in order to operate at nominal LED current. 2. During powerup, the slew rate of the input supply should be greater than 1 s for every 5 V increase of VBAT. Table 3. ELECTRICAL CHARACTERISTICS (V = 13 V, ambient temperature of 25C (over recommended operating conditions unless otherwise specified)) IN Symbol Parameter Conditions Min Typ Max Units I Operating Supply Current on VBAT pin 0.4 1 mA Q I Idle Mode Supply Current on VBAT pin CTRL = GND 90 A SD V RSET Pin Voltage 2 LEDs with I = 300 mA 1.15 1.2 1.25 V FB LED I Programmed LED Current R1 = 33 k 100 mA LED R1 = 10 k 270 300 330 350 R1 = 8.25 k V CTRL Voltage for 100% Brightness 2.6 3.1 V CTRLFULL V CTRL Voltage to Enable LEDs LED enable voltage threshold 0.9 1.2 V CTRLEN V CTRL Voltage to Shutdown LEDs LED disable voltage threshold 0.4 0.9 V CTRLSD I CTRL pin input bias V = 3 V 40 80 A CTRL CTRL V = 12 V 200 CTRL R Switch On Resistance I = 300 mA 0.9 1.5 SW SW T Thermal Shutdown 150 C SD T Thermal Hysteresis 20 C HYST Efficiency Typical Application Circuit 86 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2