CNY17 Series, MOC8106M 6-Pin DIP High B VCEO Phototransistor Optocouplers Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of www.onsemi.com a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual inline package. Features 6 High BV : 70 V Minimum CEO (CNY17XM, CNY17FXM, MOC8106M) 1 PDIP6 Closely Matched Current Transfer Ratio (CTR) Minimizes CASE 646BY UnittoUnit Variation Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With 6 6 No ChiptoPin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M) 1 1 Safety and Regulatory Approvals: PDIP6 PDIP6 CASE 646BZ CASE 646BX UL1577, 4,170 VAC for 1 Minute RMS DINEN/IEC6074755, 850 V Peak Working Insulation Voltage MARKING DIAGRAM Applications Power Supply Regulators 1 Digital Logic Inputs ON Microprocessor Inputs CNY171 2 Appliance Sensor Systems 6 V X YY Q Industrial Controls 3 4 5 1. ON = Company Logo 2. CNY17 = Device Number 3. V = DIN EN/IEC6074755 Option (only appears on component ordered with this option) 4 X = OneDigit Year Code 5. YY = Digit Work Week 6. Q = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: March, 2021 Rev. 2 CNY17F4M/DCNY17 Series, MOC8106M SCHEMATICS 1 6 1 6 ANODE NC ANODE BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR 3 3 NC 4 EMITTER NC 4 EMITTER CNY17F1M/2M/3M/4M CNY171M/2M/3M/4M MOC8106M Figure 1. Schematics SAFETY AND INSULATION RATINGS As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE < 150 V IIV RMS 0110/1.89 Table 1, For Rated Mains Voltage < 300 V IIII RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1360 Vpeak PR IORM PR Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1594 Vpeak IORM PR 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 Vpeak IORM V Highest Allowable OverVoltage 6000 Vpeak IOTM 7 External Creepage mm External Clearance 7 mm 10 External Clearance (for Option TV, 0.4 Lead Spacing) mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm Case Temperature (Note 1) T 175 C S Input Current (Note 1) I 350 mA S, INPUT Output Power (Note 1) P 800 mW S, OUTPUT 9 Insulation Resistance at T , V = 500 V (Note 1) > 10 R S IO IO 1. Safety limit values maximum values allowed in the event of a failure. www.onsemi.com 2