Quad Array for ESD Protection DF6A6.8FUT This quad voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, www.onsemi.com business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 6 Features 2 5 SC88 Package Allows Four Separate Unidirectional Configurations Low Leakage < 1 A 5 Volt 3 4 Breakdown Voltage: 6.4 7.2 Volt 5 mA Low Capacitance (40 pF typical) ESD Protection Meeting 6100042 Level 4 MARKING and 16 kV Human Body Model DIAGRAM Small Package Size for High Density Applications 1 6 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 68 M CASE 419B02 PPAP Capable These are PbFree Devices 1 68 = Specific Device Code MAXIMUM RATINGS (T = 25C unless otherwise noted) A M = Date Code Rating Symbol Value Unit = PbFree Package (Note: Microdot may be in either location.) Peak Power Dissipation 8 x 20 s P 75 Watts pk (Note 1) ORDERING INFORMATION Steady State Power Dissipation P 385 mW D (Note 2) Device Package Shipping Thermal Resistance R JA DF6A6.8FUT1G SC88 3000/Tape & Reel JunctiontoAmbient 328 C/W (PbFree) Derate Above 25C 3.0 mW/C SZDF6A6.8FUT1G SC88 3000/Tape & Reel Maximum Junction Temperature T 150 C Jmax (PbFree) Operating Junction and Storage T , T 55 to C J stg DF6A6.8FUT2G SC88 3000/Tape & Reel Temperature Range +150 (PbFree) ESD Discharge V kV PP For information on tape and reel specifications, MIL STD 883C Method 30156 16 including part orientation and tape sizes, please IEC6100042, Air Discharge 16 refer to our Tape and Reel Packaging Specifications IEC6100042, Contact Discharge 8 Brochure, BRD8011/D. Lead Solder Temperature T 260 C L (10 seconds duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Per Waveform Figure 1 2. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2020 Rev. 3 DF6A6.8FUT1/DDF6A6.8FUT I I F V V BR RWM V I V R F I T VI Curve ELECTRICAL CHARACTERISTICS Typical Max Max Breakdown Voltage Leakage Current Max Capacitance Z Z Z ZK V 5 mA (Volts) I V = 5 V 0 V Bias V I = 10 mA 5 mA 0.5 mA BR RM RWM F F Device Min Nom Max ( A) (pF) (V) ( ) ( ) Device Marking DF6A6.8FUT1G 68 6.4 6.8 7.2 1.0 40 1.25 30 300 DF6A6.8FUT2G 68 6.4 6.8 7.2 1.0 40 1.25 30 300 50 100 t PEAK VALUE I 8 s r RSM 90 45 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 40 70 PEAK CURRENT DECAY = 8 s 35 60 HALF VALUE I /2 20 s RSM 50 30 40 25 30 t P 20 20 15 10 10 0 020 40 60 80 01 2 3 4 5 t, TIME ( s) BIAS VOLTAGE (VOLTS) Figure 1. 8 20 s Pulse Waveform Figure 2. Capacitance 1 10 0.1 8 x 20 s per Figure 1 0.01 0.001 0.0001 1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 8 9 10 11 12 V , FORWARD VOLTAGE (VOLTS) F V , CLAMPING VOLTAGE (VOLTS) C Figure 3. Forward Voltage Figure 4. Clamping Voltage versus Peak Pulse Current www.onsemi.com 2 I , FORWARD CURRENT (A) % OF PEAK PULSE CURRENT F TYPICAL CAPACITANCE (pF) I , PEAK PULSE CURRENT (AMPS) 1 MHz FREQUENCY pp