EFC4K105NUZ Power MOSFET for 12 Cells Lithiumion Battery Protection 22 V, 3.55 m , 25 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable V R MAX I MAX SSS SS(ON) S machines. Best suited for 1-2 cells lithium-ion battery applications. 22 V 3.55 m 4.5 V 25 A Features 3.65 m 3.8 V 2.5 V Drive 5.3 m 3.1 V Common-Drain Type ESD Diode-Protected Gate 7.2 m 2.5 V This device is Pb-Free, Halogen Free and RoHS Compliance ELECTRICAL CONNECTION Applications 6, 7, 8, 10 1-2 Cells Lithium-ion Battery Charging and Discharging Switch 1: Source1 Specifications 2: Gate1 9 3: Source1 ABSOLUTE MAXIMUM RATINGS (T = 25C) 4: Source1 A 5: Source1 Parameter Symbol Value Unit 6: Source2 7: Source2 Source to Source Voltage V 22 V SSS 2 8: Source2 Gate to Source Voltage V 12 V GSS 9: Gate2 10: Source2 Source Current (DC) I 25 A S 1, 3, 4, 5 Source Current (Pulse) I 100 A SP PW 10 s, duty cycle 1% N-Channel Total Dissipation (Note 1) P 2.5 W T PIN ASSIGNMENT Junction Temperature T 150 C j Storage Temperature T 55 to +150 C stg 1 10 Stresses exceeding those listed in the Maximum Ratings table may damage the 45 6 7 device. If any of these limits are exceeded, device functionality should not be 9 2 WLCSP10 assumed, damage may occur and reliability may be affected. 3 8 (3.40 x 1.96 x 0.10) CASE 567PL THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit MARKING DIAGRAM Junction to Ambient (Note 1) R 50 C/W JA NZ 2 1. Surface mounted on ceramic substrate (5000 mm 0.8 mm). AYWZZ NZ = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2018 Rev. 0 EFC4K105NUZ/DEFC4K105NUZ ELECTRICAL CHARACTERISTICS (T = 25C) A Symbol Parameter Conditions Min Typ Max Unit V Source to Source Breakdown Voltage I = 1 mA, V = 0 V 22 V (BR)SSS S GS I Zero-Gate Voltage Source Current V = 17.6 V, V = 0 V 1 A SSS SS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 1 A GSS GS SS V (th) Gate Threshold Voltage V = 10 V, I = 1 mA 0.4 1.3 V GS SS S R (on) Static Source to Source On-State I = 5 A, V = 4.5 V 1.8 2.7 3.55 m SS S GS Resistance I = 5 A, V = 3.8 V 1.9 2.8 3.65 m S GS I = 5 A, V = 3.1 V 2.0 3.3 5.3 m S GS I = 5 A, V = 2.5 V 2.2 4.0 7.2 m S GS V = 10 V, V = 3.8 V, I = 5 A t (on) Turn-ON Delay Time 13 s d SS GS S Rg = 10 k Switching Test Circuit t Rise Time 35 s r t (off) Turn-OFF Delay Time 185 s d t Fall Time 78 s f Qg Total Gate Charge V = 10 V, V = 3.8 V, I = 5 A 43 nC SS GS S V Forward Source to Source Voltage I = 3 A, V = 0 V 0.75 1.2 V F(S S) S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t (on), t , t (off), t d r d f S2 R L G2 When FET1 is measured, Gate and Source of FET2 V are short-circuited. G1 R g V SS S1 Figure 1. Switching Test Circuit ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) EFC4K105NUZTDG NZ WLCSOP10, 3.40 x 1.96 x 0.10 5,000 / Tape & Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2