X-On Electronics has gained recognition as a prominent supplier of ESD8551N2T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESD8551N2T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESD8551N2T5G ON Semiconductor

ESD8551N2T5G electronic component of ON Semiconductor
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Part No.ESD8551N2T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes LO CAP ESD PRT DIODE HIGH SPEED DATA LINE
Datasheet: ESD8551N2T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.1046 ea
Line Total: USD 836.8 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.1046

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESD8551N2T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESD8551N2T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD Protection Diodes Low Capacitance ESD Protection Diode for High Speed Data Line ESD8551, SZESD8551 The ESD8551 ESD protection diodes are designed to protect high speed data lines from ESD. Ultralow capacitance and low ESD www.onsemi.com clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. MARKING Features DIAGRAMS Low Capacitance (0.30 pF Max, I/O to GND) X2DFN2 Protection for the Following IEC Standards: A M CASE 714AB IEC 6100042 (Level 4) & ISO 10605 Low ESD Clamping Voltage SZESD8551MXWT5G Wettable Flank Package for Optimal A = Specific Device Code M = Date Code Automated Optical Inspection (AOI) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and X2DFNW2 K M PPAP Capable CASE 711BG These Devices are PbFree, Halogen Free/BFR Free and are RoHS K = Specific Device Code Compliant M = Date Code Typical Applications USB 3.0 MHL 2.0 PIN CONFIGURATION AND SCHEMATIC eSATA MAXIMUM RATINGS (T = 25C unless otherwise noted) J 12 Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact ESD 20 kV IEC 6100042 Air 20 ISO 10605 150 pF/2 k 30 ISO 10605 330 pF/2 k 30 ISO 10605 330 pF/330 15 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2021 Rev. 5 ESD8551/D =ESD8551, SZESD8551 ORDERING INFORMATION Device Package Shipping ESD8551N2T5G X2DFN2 8000 / Tape & Reel (PbFree) SZESD8551N2T5G* X2DFN2 8000 / Tape & Reel (PbFree) SZESD8551MXWT5G* X2DFNW2 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC Q101 Qualified and PPAP Capable. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R DYN V Working Peak Voltage RWM I HOLD I Maximum Reverse Leakage Current V R RWM I T V V Breakdown Voltage I V V V V BR T BR C RWM HOLD I R I V R V V V HOLD RWM C BR I Test Current I T T I V Holding Reverse Voltage HOLD HOLD I Holding Reverse Current HOLD R DYN R Dynamic Resistance DYN I PP I Maximum Peak Pulse Current PP V = V + (I * R ) C HOLD PP DYN V Clamping Voltage I C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 7.9 8.3 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 5 500 nA R RWM Reverse Holding Voltage V I/O Pin to GND 2.05 V HOLD Holding Reverse Current I I/O Pin to GND 17 mA HOLD Clamping Voltage (Note 1) V IEC6100042, 8 KV Contact V C Clamping Voltage V 9.0 V I = 8 A IEC 6100042 Level 2 equivalent C PP TLP (Note 2) (4 kV Contact, 4 kV Air) I = 16 A 16.0 PP IEC 6100042 Level 4 equivalent (8 kV Contact, 8 kV Air) Dynamic Resistance R Pin1 to Pin2 0.84 DYN Pin2 to Pin1 0.84 Junction Capacitance C V = 0 V, f = 1 MHz 0.20 0.30 pF J R Junction Capacitance C V = 0 V, f = 2.5 GHz 0.19 0.25 pF J R 1. For test procedure see Figure 7 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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