ESD Protection Diodes Low Capacitance ESD Protection Diode for High Speed Data Line ESD8551, SZESD8551 The ESD8551 ESD protection diodes are designed to protect high speed data lines from ESD. Ultralow capacitance and low ESD www.onsemi.com clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. MARKING Features DIAGRAMS Low Capacitance (0.30 pF Max, I/O to GND) X2DFN2 Protection for the Following IEC Standards: A M CASE 714AB IEC 6100042 (Level 4) & ISO 10605 Low ESD Clamping Voltage SZESD8551MXWT5G Wettable Flank Package for Optimal A = Specific Device Code M = Date Code Automated Optical Inspection (AOI) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and X2DFNW2 K M PPAP Capable CASE 711BG These Devices are PbFree, Halogen Free/BFR Free and are RoHS K = Specific Device Code Compliant M = Date Code Typical Applications USB 3.0 MHL 2.0 PIN CONFIGURATION AND SCHEMATIC eSATA MAXIMUM RATINGS (T = 25C unless otherwise noted) J 12 Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact ESD 20 kV IEC 6100042 Air 20 ISO 10605 150 pF/2 k 30 ISO 10605 330 pF/2 k 30 ISO 10605 330 pF/330 15 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2021 Rev. 5 ESD8551/D =ESD8551, SZESD8551 ORDERING INFORMATION Device Package Shipping ESD8551N2T5G X2DFN2 8000 / Tape & Reel (PbFree) SZESD8551N2T5G* X2DFN2 8000 / Tape & Reel (PbFree) SZESD8551MXWT5G* X2DFNW2 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC Q101 Qualified and PPAP Capable. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R DYN V Working Peak Voltage RWM I HOLD I Maximum Reverse Leakage Current V R RWM I T V V Breakdown Voltage I V V V V BR T BR C RWM HOLD I R I V R V V V HOLD RWM C BR I Test Current I T T I V Holding Reverse Voltage HOLD HOLD I Holding Reverse Current HOLD R DYN R Dynamic Resistance DYN I PP I Maximum Peak Pulse Current PP V = V + (I * R ) C HOLD PP DYN V Clamping Voltage I C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 7.9 8.3 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 5 500 nA R RWM Reverse Holding Voltage V I/O Pin to GND 2.05 V HOLD Holding Reverse Current I I/O Pin to GND 17 mA HOLD Clamping Voltage (Note 1) V IEC6100042, 8 KV Contact V C Clamping Voltage V 9.0 V I = 8 A IEC 6100042 Level 2 equivalent C PP TLP (Note 2) (4 kV Contact, 4 kV Air) I = 16 A 16.0 PP IEC 6100042 Level 4 equivalent (8 kV Contact, 8 kV Air) Dynamic Resistance R Pin1 to Pin2 0.84 DYN Pin2 to Pin1 0.84 Junction Capacitance C V = 0 V, f = 1 MHz 0.20 0.30 pF J R Junction Capacitance C V = 0 V, f = 2.5 GHz 0.19 0.25 pF J R 1. For test procedure see Figure 7 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2