MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 75 A, 29 m FCH029N65S3 www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 29 m 10 V 75 A conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET D Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V T = 150C J G Typ. R = 23.7 m DS(on) Ultra Low Gate Charge (Typ. Q = 201 nC) g Low Effective Output Capacitance (Typ. C = 1615 pF) oss(eff.) S 100% Avalanche Tested POWER MOSFET These Devices are PbFree and are RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar G D S TO2473LD CASE 340CX MARKING DIAGRAM Y&Z&3&K FCH 029N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCH029N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: June, 2020 Rev. 0 FCH029N65S3/DFCH029N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 75 A D C Continuous (T = 100C) 50.8 C I Drain Current Pulsed (Note 1) 200 A DM E Single Pulsed Avalanche Energy (Note 2) 503 mJ AS I Avalanche Current (Note 2) 11.5 A AS E Repetitive Avalanche Energy (Note 1) 4.63 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 463 W D C Derate Above 25C 3.7 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I = 11.5 A, R = 25 , starting T = 25C. AS G J 3. I 37.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.27 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH029N65S3F155 FCH029N65S3 TO247 G03 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V =0V, I = 1 mA, T =25 C 650 V DSS GS D J V =0V, I = 1 mA, T = 150 C 700 V GS D J BV / T Breakdown Voltage Temperature I = 1 mA, Referenced to 25 C 0.72 V/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 650 V, V =0V 1 A DSS DS GS V = 520 V, T = 125 C 6.2 DS C I Gate to Body Leakage Current V = 30 V, V =0V 100 nA GSS GS DS ON CHARACTERISTICS V Gate Threshold Voltage V =V , I = 7.0 mA 2.5 4.5 V GS(th) GS DS D R Static Drain to Source On Resistance V =10V, I = 37.5 A 23.7 29 m DS(on) GS D g Forward Transconductance V =20V, I = 37.5 A 48 S FS DS D www.onsemi.com 2