MOSFET - Power, Single N-Channel, TOLL 40 V, 0.67 m , 240 A FDBL9401-F085T6 Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable Small Footprint (TOLL) for Compact Design V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 40 V 0.67 m 10 V 240 A Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (9) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V +20/16 V GS Continuous Drain T = 25C I 240 A C D Current R JC G (1) T = 100C 240 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 180.7 W C D R (Note 1) JC T = 100C 90.3 C S (2 8) Continuous Drain T = 25C I 58.4 A A D NCHANNEL MOSFET Current R JA T = 100C 41.3 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 4.3 W A D R (Notes 1, 2) JA T = 100C 2.1 A Pulsed Drain Current I 2758 A T = 25C, t = 10 s A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 138 A S HPSOF8L Single Pulse DraintoSource Avalanche E 1012 mJ AS CASE 100CU Energy (I = 45 A, L = 1 mH) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. FDBL9401F085T6 HPSOF8L 2000 / Tape & (PbFree) Reel THERMAL RESISTANCE MAXIMUM RATINGS For information on tape and reel specifications, Parameter Symbol Value Unit including part orientation and tape sizes, please JunctiontoCase Steady State R 0.83 C/W JC refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. JunctiontoAmbient Steady State (Note 2) R 35 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Current is limited by bondwire configuration. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2021 Rev. 2 FDBL9401F085T6/DFDBL9401 F085T6 Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V I = 250 A, V = 0 V 40 V (BR)DSS D GS DraintoSource Breakdown Voltage V /T 23.4 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 40 V, V = 0 V T = 25C 1 A DSS DS GS J T = 175C 1 mA J GatetoSource Leakage Current I V = 0 V, V = +20/16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 290 A 2 2.8 4 V GS(th) GS DS D Threshold Temperature Coefficient V /T 6.5 mV/C GS(th) J DraintoSource On Resistance R V = 10 V, I = 50 A 0.6 0.67 m DS(on) GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, V = 25 V, f = 100 KHz 10000 pF iss GS DS Output Capacitance C 5100 pF oss Reverse Transfer Capacitance C 177 pF rss Gate Resistance R V = 0.5 V, f = 1 MHz 2.1 g GS Total Gate Charge Q V = 10 V, V = 20 V, I = 50 A 148 nC G(tot) GS DS D Threshold Gate Charge Q V = 0 to 2 V 18 nC G(th) GS GatetoSource Gate Charge Q V = 32 V, I = 50 A 42 nC gs DD D GatetoDrain Miller Charge Q 30 nC gd Plateau Voltage V 4.5 V GP SWITCHING CHARACTERISTICS (Note 5) V = 10 V, V = 20 V, TurnOn Delay Time t 37 ns d(on) GS DD I = 50 A, R = 6 D GEN TurnOn Rise Time t 76 ns r TurnOff Delay Time t 133 ns d(off) TurnOff Fall Time t 65 ns f DRAINSOURCE DIODE CHARACTERISTICS I = 50 A, V = 0 V 0.77 1.2 V SourcetoDrain Diode Voltage V SD SD GS Reverse Recovery Time t 97 ns rr V = 0 V, dI /d = 100 A/ s, GS S t I = 50 A S Charge Time t 37 ns a Discharge Time t 60 ns b Reverse Recovery Charge Q 218 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2