MOSFET - Power, Single N-Channel, TOLL 40 V, 1.21 m , 240 A FDBL9406-F085T6 Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 40 V 1.21 m 10 V 240 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) D (9) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V +20/16 V GS Continuous Drain T = 25C I 240 A G (1) C D Current R (Note 2) JC T = 100C 179.4 C Steady State Power Dissipation T = 25C P 136.4 W C D R (Note 2) JC S (2 8) T = 100C 68.2 C Continuous Drain T = 25C I 45 A D A Current R JA T = 100C 31.8 (Notes 1, 2) A Steady State Power Dissipation T = 25C P 4.3 W A D R (Notes 1, 2) JA T = 100C 2.1 A Pulsed Drain Current T = 25C, t = 10 s I 2817 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg HPSOF8L Range +175 CASE 100CU Source Current (Body Diode) I 221 A S Single Pulse DraintoSource Avalanche E 271 mJ AS Energy (I = 42.5 A) L(pk) ORDERING INFORMATION Lead Temperature Soldering Reflow for Solder- T 260 C L ing Purposes (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the FDBL9406F085T6 HPSOF8L 2000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please THERMAL RESISTANCE MAXIMUM RATINGS refer to our Tape and Reel Packaging Specification Parameter Symbol Value Unit Brochure, BRD8011/D. C/W JunctiontoCase Steady State (Note 2) R 1.1 JC JunctiontoAmbient Steady State (Note 2) R 35 JA 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: June, 2020 Rev. 0 FDBL9406F085T6/DFDBL9406 F085T6 Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V I = 250 A, V = 0 V 40 V (BR)DSS D GS DraintoSource Breakdown Voltage V /T 24.9 mV/C I = 250 A, V = 0 V (BR)DSS J D GS Temperature Coefficient V = 40 V, V = 0 V T = 25C 10 A Zero Gate Voltage Drain Current I DSS DS GS J GatetoSource Leakage Current I V = 0 V, V = +20/16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 190 A 2 2.8 3.5 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 6.9 mV/C GS(th) J DraintoSource On Resistance R V = 10 V, I = 50 A 1.1 1.21 m DS(on) GS D Forward Transconductance g V = 15 V, I = 50 A 143 S FS DS D CHARGES & CAPACTIANCES Input Capacitance C V = 0 V, V = 25 V, f = 1 MHz 4960 pF iss GS DS Output Capacitance C 2800 pF oss Reverse Transfer Capacitance C 62 pF rss Total Gate Charge Q V = 10 V, V = 20 V, 75 nC G(tot) GS DS I = 50 A D Threshold Gate Charge Q 9 nC G(th) GatetoSource Charge Q 22 nC gs GatetoDrain Charge Q 16 nC gd SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t V = 10 V, V = 20 V, 27 ns GS DS d(on) I = 50 A, R = 6 D G Rise Time t 44 ns r TurnOff Delay Time t 61 ns d(off) Fall Time t 26 ns f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V I = 50 A, V = 0 V T = 25C 0.8 1.2 V SD S GS J I = 50 A, V = 0 V T = 125C 0.6 V S GS J Reverse Recovery Time t 78 ns V = 0 V, dI /d = 100 A/ s, rr GS S t I = 50 A S Charge Time t 39 ns a Discharge Time t 39 ns b Reverse Recovery Charge Q 101 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2