FDMA037N08LC Single N-Channel POWERTRENCH MOSFET 80 V, 6 A, 36.5 m Description www.onsemi.com This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low V r MAX I r and gate charge provide excellent switching performance. DS DS(on) D MAX DS(on) 80 V 6 A 36.5 m 10 V Features PTNG MOSFET Technology Single NChannel Max r = 36.5 m at V = 10 V, I = 4 A DS(on) GS D Max r = 56.9 m at V = 4.5 V, I = 3 A DS(on) GS D Bottom Drain Contact 5 V Drive Capable D D 1 6 50% Lower Q than Other MOSFET Suppliers rr Lower Switching Noise/EMI D 2 5 D Low Profile 0.8 mm Maximum in the New Package MicroFET G 3 4 S 2x2 mm These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications DCDC Buck Converters WDFN6 2x2, 0.65P CASE 511DB MARKING DIAGRAM &Z&2&K 037L &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code 037L = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2018 Rev. 2 FDMA037N08LC/DFDMA037N08LC MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Ratings Unit V V Drain to Source Voltage 80 DS V V Gate to Source Voltage 20 GS A I 6 Continuous T = 25C (Note 1a) D A Pulsed 55 W P Power Dissipation T = 25C (Note 1a) 2.4 D A Power Dissipation T = 25C (Note 1b) 0.9 A C T , T 55 to +150 Operating and Storage Junction Temperature Range J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping (Qty / Packing) 037L FDMA037N08LC WDFN6 2x2, 0.65P 7 8 mm 3000 / Tape & Reel (MicroFET) (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage 80 V I = 250 A, V = 0 V DSS D GS Breakdown Voltage I = 250 A, referenced to 25C 69 mV/C BV D DSS Temperature Coefficient T J I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 20 A 1.0 1.3 2.5 V GS(th) GS DS D Gate to Source Threshold Voltage I = 20 A, referenced to 25C 5 mV/C V D GS(th) Temperature Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 4 A 30.9 36.5 m DS(on) GS D V = 4.5 V, I = 3 A 42.1 56.9 GS D V = 10 V, I = 4 A, T = 125C 51.4 61 GS D J g Forward Transconductance V = 5 V, I = 4 A 15 S FS DD D DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 425 595 pF iss DS GS C Output Capacitance 110 155 pF oss C Reverse Transfer Capacitance 6.0 8.3 pF rss www.onsemi.com 2