FDMS4D5N08LC MOSFET, N-Channel Shielded Gate, POWERTRENCH 80 V, 116 A, 4.2 m www.onsemi.com General Description This N Channel MV MOSFET is produced using ELECTRICAL CONNECTION ONSemiconductors advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been G D 5 4 optimized to minimise onstate resistance and yet maintain superior switching performance with best in class soft body diode. S D 6 3 Features S D 7 2 Shielded Gate MOSFET Technology 1 S D 8 Max r = 4.2 m at V = 10 V, I = 37 A DS(on) GS D Max r = 6.1 m at V = 4.5 V, I = 29 A DS(on) GS D N-Channel MOSFET 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI D D MSL1 Robust Package Design D D 100% UIL Tested G RoHS Compliant S S Pin 1 S Top Typical Applications Bottom Primary DCDC MOSFET Power 56 Synchronous Rectifier in DCDC and ACDC (PQFN8 5x6) CASE 483AE Motor Drive Solar MARKING DIAGRAM MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit Y&Z&3&K FDMS V Drain to Source Voltage 80 V DS 4D5N08LC V Gate to Source Voltage 20 V GS I Drain Current Continuous T = 25C (Note 5) 116 A D C Continuous T = 100C 73 C Y = ON Semiconductor Logo (Note 5) &Z = Assembly Plant Code Continuous T = 25C 17 A &3 = Numeric Date Code (Note 1a) &K = Lot Code FDMS4D5N08LC = Specific Device Code Pulsed (Note 4) 633 E Single Pulse Avalanche Energy (Note 3) 384 mJ AS P Power dissipation T = 25C 113.6 W ORDERING INFORMATION D C See detailed ordering and shipping information on page 2 Power dissipation T = 25C (Note 1a) 2.5 A of this data sheet. T Operating and Storage Junction Temperature 55 to C J, T Range +150 STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: November, 2018 Rev. 0 FDMS4D5N08LC/DFDMS4D5N08LC THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Case 1.1 JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping FDMS4D5N08LC FDMS4D5N08LC PQFN8 56 3000 Units/ (PbFree/Halogen Free) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 80 V DSS D GS Breakdown Voltage Temperature I = 250 A, referenced to 25C 66 BV D DSS mV/C Coefficient T J I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 A DSS DS GS I GatetoSource Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 210 A 1.0 1.4 2.5 V GS(th) GS DS D Gate to Source Threshold Voltage I = 210 A, referenced to 25C 5.1 V D GS(th) mV/C Temperature Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 37 A 3.2 4.2 m DS(on) GS D V = 4.5 V, I = 29 A 4.5 6.1 GS D V = 10 V, I = 37 A, T = 125C 5.7 7.5 GS D J g Forward Transconductance V = 5 V, I = 37 A 135 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1MHz 3640 5100 iss DS GS C Output Capacitance 834 1170 pF oss C Reverse Transfer Capacitance 39 65 rss R Gate Resistance 0.1 0.6 1.1 g SWITCHING CHARACTERISTICS td Turn On Delay Time V = 40 V, I = 37 A, 13 23 ns (on) DD D V = 10 V, R = 6 GS GEN t Rise Time 19 34 r t Turn Off Delay Time 59 94 D(off) t Fall Time 17 30 f V = 0V to 10 V Q Total Gate Charge 51 71 nC GS g Q Total Gate Charge 24 34 g V = 0V to 4.5 V GS V = 40 V, DD Q Gate to Source Charge 8 gs i = 37 A D Q Gate to Drain Miller Charge 6 gd Q Output Charge V = 40 V, V = 0 V 51 nC oss DD GS Q Total Gate Charge Sync. V = 0 V, I = 37 A 46 sync DS D www.onsemi.com 2