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TM FDMT1D3N08B N-Channel Dual Cool 88 PowerTrench MOSFET www.onsemi.com FDMT1D3N08B TM N-Channel Dual Cool 88 PowerTrench MOSFET 80 V, 164 A, 1.35 m Features General Description Max r = 1.35 m at V = 10 V, I = 36 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process. Max r = 1.8 m at V = 8 V, I = 31 A DS(on) GS D TM Advancements in both silicon and Dual Cool package Advanced Package and Silicon Combination for Low r DS(on) technologies have been combined to offer the lowest r DS(on) and High Efficiency while maintaining excellent switching performance by extremely Next Generation Enhanced Body Diode Technology, low Junction-to-Ambient thermal resistance. Engineered for Soft Recovery Applications Low Profile 8x8 mm MLP Package OringFET / Load Switching MSL1 Robust Package Design Synchronous Rectification 100% UIL Tested DC-DC Conversion RoHS Compliant Pin 1 G Pin 1 S D G S S D S S D D S D D D S D Top TM Bottom Dual Cool 88 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 164 C -Continuous T = 100 C (Note 5) 103 C I A D -Continuous T = 25 C (Note 1a) 36 A -Pulsed (Note 4) 864 E Single Pulse Avalanche Energy (Note 3) 1734 mJ AS Power Dissipation T = 25 C 178 C P W D Power Dissipation T = 25 C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Top Source) 1.9 JC R Thermal Resistance, Junction-to-Case (Bottom Drain) 0.7 JC R Thermal Resistance, Junction-to-Ambient (Note 1a) 38 JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 81 C/W JA R Thermal Resistance, Junction-to-Ambient (Note 1i) 15 JA R Thermal Resistance, Junction-to-Ambient (Note 1j) 21 JA R Thermal Resistance, Junction-to-Ambient (Note 1k) 9 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 1D3N08B FDMT1D3N08B Dual Cool 88 13 13.3 mm 3000 units Semiconductor Components Industries, LLC, 2016 Publication Order Number: November, 2016, Rev. 1.0 FDMT1D3N08B/D 1